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NRVBM120ET1G Datasheet(PDF) 4 Page - ON Semiconductor |
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NRVBM120ET1G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 6 page MBRM120ET1G, NRVBM120ET1G, MBRM120ET3G, NRVBM120ET3G http://onsemi.com 4 Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* 12 0 VR, REVERSE VOLTAGE (VOLTS) 1000 100 10 VR, DC REVERSE VOLTAGE (VOLTS) 6.0 20 0 146 144 6.0 2.0 4.0 8.0 10 8.0 10 2.0 4.0 148 150 * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re- verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. Rtja = 33.72C/W 51C/W 83.53C/W 96C/W TJ = 25C 20 18 12 14 69C/W 16 14 16 18 |
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