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NRVB120ESFT1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NRVB120ESFT1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page MBR120ESF, NRVB120ESF http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 V Average Rectified Forward Current (At Rated VR, TL = 140°C) IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TL = 125°C) IFRM 2.0 A Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 40 A Storage Temperature Tstg −65 to 150 °C Operating Junction Temperature TJ −65 to 150 °C Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance − Junction−to−Lead (Note 1) Thermal Resistance − Junction−to−Lead (Note 2) Thermal Resistance − Junction−to−Ambient (Note 1) Thermal Resistance − Junction−to−Ambient (Note 2) Rtjl Rtjl Rtja Rtja 26 21 325 82 °C/W 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2). ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3), See Figure 2 VF TJ = 25°C TJ = 100°C V (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) 0.455 0.530 0.595 0.360 0.455 0.540 Maximum Instantaneous Reverse Current (Note 3), See Figure 4 IR TJ = 25°C TJ = 100°C mA (VR = 20 V) (VR = 10 V) (VR = 5.0 V) 10 1.0 0.5 1600 500 300 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%. |
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