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2SK3269 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part # 2SK3269
Description  N-channel enhancement mode MOSFET
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SK3269 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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Power MOSFETs
1
Publication date: March 2004
SJG00032AED
2SK3269
N-channel enhancement mode MOSFET
■ Features
• Low on-resistance, low Q
g
• High avalanche resistance
■ Applications
• For PDP
• For high-speed switching
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
VDSS
100
V
Gate-source surrender voltage
VGSS
±20
V
Drain current
ID
±25
A
Peak drain current
IDP
±100
A
Avalanche energy capability *
EAS
22.5
mJ
Power dissipation
PD
40
W
Ta
= 25°C
1.4
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
123
(8.9)
(10.2)
0 to 0.3
10.5±0.3
4.6±0.2
1.4±0.1
0.8±0.1
2.5±0.2
1.4±0.1
2.54±0.3
1: Gate
2: Drain
3: Source
TO-220C-G1 Package
Note) *: L
= 0.2 mH, I
L
= 15 A, 1 pulse
Internal Connection
Marking Symbol: K3269
G
D
S
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
VDSS
ID = 1 mA, VGS = 0
100
V
Gate threshold voltage
Vth
VDS
= 10 V, I
D
= 1 mA
2.0
4.0
V
Drain-source cutoff current
IDSS
VDS = 80 V, VGS = 010
µA
Gate-source cutoff current
IGSS
VGS = ±20 V, VDS = 0
±1
µA
Drain-source ON resistance
RDS(on)
VGS
= 10 V, I
D
= 12 A
70
100
m
Forward transfer admittance
Y
fs
VDS = 10 V, ID = 12 A
6
11
S
Short-circuit forward transfer capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
960
pF
(Common-source)
Short-circuit output capacitance
Coss
285
pF
(Common-source)
Reverse transfer capacitance
Crss
85
pF
(Common-source)
Turn-on delay time
td(on)
VDD = 30 V, ID = 12 A
15
ns
Rise time
Tr
RL
= 2.5 Ω, V
GS
= 10 V
10
ns
Turn-off delay time
td(off)
65
ns
Fall time
tf
35
ns


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