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2SK3269 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SK3269 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page Power MOSFETs 1 Publication date: March 2004 SJG00032AED 2SK3269 N-channel enhancement mode MOSFET ■ Features • Low on-resistance, low Q g • High avalanche resistance ■ Applications • For PDP • For high-speed switching ■ Absolute Maximum Ratings T C = 25°C ■ Electrical Characteristics T C = 25°C ± 3°C Unit: mm Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 100 V Gate-source surrender voltage VGSS ±20 V Drain current ID ±25 A Peak drain current IDP ±100 A Avalanche energy capability * EAS 22.5 mJ Power dissipation PD 40 W Ta = 25°C 1.4 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 123 (8.9) (10.2) 0 to 0.3 10.5±0.3 4.6±0.2 1.4±0.1 0.8±0.1 2.5±0.2 1.4±0.1 2.54±0.3 1: Gate 2: Drain 3: Source TO-220C-G1 Package Note) *: L = 0.2 mH, I L = 15 A, 1 pulse Internal Connection Marking Symbol: K3269 G D S Parameter Symbol Conditions Min Typ Max Unit Drain-source surrender voltage VDSS ID = 1 mA, VGS = 0 100 V Gate threshold voltage Vth VDS = 10 V, I D = 1 mA 2.0 4.0 V Drain-source cutoff current IDSS VDS = 80 V, VGS = 010 µA Gate-source cutoff current IGSS VGS = ±20 V, VDS = 0 ±1 µA Drain-source ON resistance RDS(on) VGS = 10 V, I D = 12 A 70 100 m Ω Forward transfer admittance Y fs VDS = 10 V, ID = 12 A 6 11 S Short-circuit forward transfer capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz 960 pF (Common-source) Short-circuit output capacitance Coss 285 pF (Common-source) Reverse transfer capacitance Crss 85 pF (Common-source) Turn-on delay time td(on) VDD = 30 V, ID = 12 A 15 ns Rise time Tr RL = 2.5 Ω, V GS = 10 V 10 ns Turn-off delay time td(off) 65 ns Fall time tf 35 ns |
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