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SIHG22N60AE Datasheet(PDF) 6 Page - Vishay Siliconix

Part No. SIHG22N60AE
Description  E Series Power MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SIHG22N60AE Datasheet(HTML) 6 Page - Vishay Siliconix

   
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SiHG22N60AE
www.vishay.com
Vishay Siliconix
S16-1715-Rev. A, 29-Aug-16
6
Document Number: 91923
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 19 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91923.
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 V
a
V
DD
I
SD
Driver gate drive
D.U.T. I
SD waveform
D.U.T. V
DS waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+
-
-
-
Note
a. V
GS = 5 V for logic level devices
Peak Diode Recovery dV/dt Test Circuit
V
DD
• dV/dt controlled by R
g
• Driver same type as D.U.T.
• I
SD controlled by duty factor “D”
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
R
g
2
1
2
1
3
4
4
3


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