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SIHA25N60EFL Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. SIHA25N60EFL
Description  E Series Power MOSFET with Fast Body Diode and Low Gate Charge
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIHA25N60EFL Datasheet(HTML) 4 Page - Vishay Siliconix

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SiHA25N60EFL
www.vishay.com
Vishay Siliconix
S16-1601-Rev. B, 15-Aug-16
4
Document Number: 91856
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Safe Operating Area
Fig. 10 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Typical Drain-to-Source Voltage vs. Temperature
0
4
8
12
16
20
24
0
20406080
100
Q
g, Total Gate Charge (nC)
V
DS = 480 V
V
DS = 300 V
V
DS = 120 V
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD, Source-Drain Voltage (V)
T
J = 150 °C
T
J = 25 °C
V
GS = 0 V
0.01
0.1
1
10
100
110
100
1000
V
DS, Drain-to-Source Voltage (V)
* V
GS > minimum VGS at which RDS(on) is specified
Limited by R
DS(on)*
1 ms
I
DM Limited
T
C = 25 °C
T
J = 150 °C
Single pulse
BVDSS limited
10 ms
100 μs
Operation in this Area
Limited by R
DS(on)
0
5
10
15
20
25
25
50
75
100
125
150
T
C, Case Temperature (°C)
575
600
625
650
675
700
725
750
775
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
J, Junction Temperature (°C)
I
D = 10 mA


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