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SIHA25N60EFL Datasheet(PDF) 4 Page - Vishay Siliconix |
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SIHA25N60EFL Datasheet(HTML) 4 Page - Vishay Siliconix |
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4 / 7 page 
SiHA25N60EFL www.vishay.com Vishay Siliconix S16-1601-Rev. B, 15-Aug-16 4 Document Number: 91856 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Safe Operating Area Fig. 10 - Maximum Drain Current vs. Case Temperature Fig. 11 - Typical Drain-to-Source Voltage vs. Temperature 0 4 8 12 16 20 24 0 20406080 100 Q g, Total Gate Charge (nC) V DS = 480 V V DS = 300 V V DS = 120 V 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V SD, Source-Drain Voltage (V) T J = 150 °C T J = 25 °C V GS = 0 V 0.01 0.1 1 10 100 110 100 1000 V DS, Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Limited by R DS(on)* 1 ms I DM Limited T C = 25 °C T J = 150 °C Single pulse BVDSS limited 10 ms 100 μs Operation in this Area Limited by R DS(on) 0 5 10 15 20 25 25 50 75 100 125 150 T C, Case Temperature (°C) 575 600 625 650 675 700 725 750 775 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J, Junction Temperature (°C) I D = 10 mA |
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