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SIHA25N60EFL Datasheet(PDF) 3 Page - Vishay Siliconix

Part No. SIHA25N60EFL
Description  E Series Power MOSFET with Fast Body Diode and Low Gate Charge
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIHA25N60EFL Datasheet(HTML) 3 Page - Vishay Siliconix

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SiHA25N60EFL
www.vishay.com
Vishay Siliconix
S16-1601-Rev. B, 15-Aug-16
3
Document Number: 91856
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - COSS and EOSS vs. VDS
0
20
40
60
0
5
10
15
20
V
DS, Drain-to-Source Voltage (V)
T
J = 25 °C
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
6 V
BOTTOM 5 V
0
6
12
18
24
30
36
0
5
10
15
20
V
DS, Drain-to-Source Voltage (V)
T
J = 150 °C
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
6 V
BOTTOM 5 V
0
20
40
60
0
5
10
15
20
V
GS, Gate-to-Source Voltage (V)
T
J = 150 °C
T
J = 25 °C
V
DS = 27.8 V
0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
J, Junction Temperature (°C)
I
D = 12.5 A
V
GS = 10 V
1
10
100
1000
10 000
100 000
0
100
200
300
400
500
600
V
DS, Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
V
GS = 0 V, f = 1 MHz
C
iss = Cgs + Cgd, Cds shorted
C
rss = Cgd
C
oss = Cds + Cgd
0
2
4
6
8
10
12
14
16
18
50
500
5000
0100
200
300
400
500
600
V
DS
C
oss
E
oss


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