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SIHA25N60EFL Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SIHA25N60EFL
Description  E Series Power MOSFET with Fast Body Diode and Low Gate Charge
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIHA25N60EFL Datasheet(HTML) 2 Page - Vishay Siliconix

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SiHA25N60EFL
www.vishay.com
Vishay Siliconix
S16-1601-Rev. B, 15-Aug-16
2
Document Number: 91856
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-65
°C/W
Maximum Junction-to-Case (Drain)
RthJC
-3.2
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
VDS Temperature Coefficient
V
DS/TJ
Reference to 25 °C, ID = 10 mA
-
0.69
-
V/°C
Gate-Source Threshold Voltage (N)
VGS(th)
VDS = VGS, ID = 250 μA
3.0
-
5.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
VGS = ± 30 V
-
-
± 1
μA
Zero Gate Voltage Drain Current
IDSS
VDS = 480 V, VGS = 0 V
-
-
1
μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
500
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 12.5 A
-
0.127
0.146
Forward Transconductance
gfs
VDS = 30 V, ID = 12.5 A
-
11.3
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
-
2274
-
pF
Output Capacitance
Coss
-
137
-
Reverse Transfer Capacitance
Crss
-4
-
Effective Output Capacitance, Energy
Related a
Co(er)
VDS = 0 V to 480 V, VGS = 0 V
-79
-
Effective Output Capacitance, Time
Related b
Co(tr)
-
330
-
Total Gate Charge
Qg
VGS = 10 V
ID = 12.5 A, VDS = 480 V
-50
75
nC
Gate-Source Charge
Qgs
-17
-
Gate-Drain Charge
Qgd
-19
-
Turn-On Delay Time
td(on)
VDD = 480 V, ID = 12.5 A,
Rg = 9.1 , VGS = 10 V
-25
50
ns
Rise Time
tr
-39
68
Turn-Off Delay Time
td(off)
-47
94
Fall Time
tf
-21
42
Gate Input Resistance
Rg
f = 1 MHz, open drain
0.4
0.7
1.4
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
25
A
Pulsed Diode Forward Current
ISM
--
61
Diode Forward Voltage
VSD
TJ = 25 °C, IS = 12.5 A, VGS = 0 V
-
0.9
1.2
V
Reverse Recovery Time
trr
TJ = 25 °C, IF = IS =12.5 A,
dI/dt = 100 A/μs, VR = 25 V
-
138
276
ns
Reverse Recovery Charge
Qrr
-0.8
1.6
μC
Reverse Recovery Current
IRRM
-11
-
A
S
D
G


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