Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

SIHA25N60EFL Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SIHA25N60EFL
Description  E Series Power MOSFET with Fast Body Diode and Low Gate Charge
Download  7 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIHA25N60EFL Datasheet(HTML) 1 Page - Vishay Siliconix

  SIHA25N60EFL Datasheet HTML 1Page - Vishay Siliconix SIHA25N60EFL Datasheet HTML 2Page - Vishay Siliconix SIHA25N60EFL Datasheet HTML 3Page - Vishay Siliconix SIHA25N60EFL Datasheet HTML 4Page - Vishay Siliconix SIHA25N60EFL Datasheet HTML 5Page - Vishay Siliconix SIHA25N60EFL Datasheet HTML 6Page - Vishay Siliconix SIHA25N60EFL Datasheet HTML 7Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 1 / 7 page
background image
SiHA25N60EFL
www.vishay.com
Vishay Siliconix
S16-1601-Rev. B, 15-Aug-16
1
Document Number: 91856
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
E Series Power MOSFET with Fast Body Diode and
Low Gate Charge
FEATURES
• Reduced figure-of-merit (FOM): Ron x Qg
• Fast body diode MOSFET using E series
technology
• Reduced trr, Qrr, and IRRM
• Increased robustness due to low Qrr
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Telecommunications
- Server and telecom power supplies
•Computing
- ATX power supplies
• Industrial
- Welding
- Induction heating
- Battery chargers
- Uninterruptible power supplies (UPS)
• Renewable energy
- String PV inverters
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5 A.
c. 1.6 mm from case.
d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
e. Limited by maximum junction.
PRODUCT SUMMARY
VDS (V) at TJ max.
650
RDS(on) typ. () at 25 °C
VGS = 10 V
0.127
Qg max. (nC)
75
Qgs (nC)
17
Qgd (nC)
19
Configuration
Single
N-Channel MOSFET
G
D
S
Thin-Lead TO-220 FULLPAK
S
D
G
ORDERING INFORMATION
Package
Thin-Lead TO-220 FULLPAK
Lead (Pb)-free
SiHA25N60EFL-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
± 30
Continuous Drain Current (TJ = 150 °C) e
VGS at 10 V
TC = 25 °C
ID
25
A
TC = 100 °C
16
Pulsed Drain Current a
IDM
61
Linear Derating Factor
2W/°C
Single Pulse Avalanche Energy b
EAS
353
mJ
Maximum Power Dissipation
PD
39
W
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to +150
°C
Drain-Source Voltage Slope
VDS = 0 V to 80 % VDS
dV/dt
70
V/ns
Reverse Diode dV/dt d
15
Soldering Recommendations (Peak temperature) c
for 10 s
300
°C
Mounting Torque
M3 screw
0.6
Nm


Html Pages

1  2  3  4  5  6  7 


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn