SIHA25N60EFL datasheet(1/7 Pages) VISHAY | E Series Power MOSFET with Fast Body Diode and Low Gate Charge

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SiHA25N60EFL

www.vishay.com

Vishay Siliconix

S16-1601-Rev. B, 15-Aug-16

Document Number: 91856

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

E Series Power MOSFET with Fast Body Diode and

Low Gate Charge

FEATURES

• Reduced figure-of-merit (FOM): Ron x Qg

• Fast body diode MOSFET using E series

technology

• Reduced trr, Qrr, and IRRM

• Increased robustness due to low Qrr

• Low input capacitance (Ciss)

• Reduced switching and conduction losses

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Telecommunications

- Server and telecom power supplies

•Computing

- ATX power supplies

• Industrial

- Welding

- Induction heating

- Battery chargers

- Uninterruptible power supplies (UPS)

• Renewable energy

- String PV inverters

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5 A.

c. 1.6 mm from case.

d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C.

e. Limited by maximum junction.

PRODUCT SUMMARY

VDS (V) at TJ max.

650

RDS(on) typ. () at 25 °C

VGS = 10 V

0.127

Qg max. (nC)

Qgs (nC)

Qgd (nC)

Configuration

Single

N-Channel MOSFET

Thin-Lead TO-220 FULLPAK

ORDERING INFORMATION

Package

Thin-Lead TO-220 FULLPAK

Lead (Pb)-free

SiHA25N60EFL-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

600

Gate-Source Voltage

VGS

± 30

Continuous Drain Current (TJ = 150 °C) e

VGS at 10 V

TC = 25 °C

TC = 100 °C

Pulsed Drain Current a

IDM

Linear Derating Factor

2W/°C

Single Pulse Avalanche Energy b

EAS

353

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +150

°C

Drain-Source Voltage Slope

VDS = 0 V to 80 % VDS

dV/dt

V/ns

Reverse Diode dV/dt d

Soldering Recommendations (Peak temperature) c

for 10 s

300

°C

Mounting Torque

M3 screw

0.6

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