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1N5336B Datasheet(PDF) 28 Page - Motorola, Inc |
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1N5336B Datasheet(HTML) 28 Page - Motorola, Inc |
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28 / 42 page  GENERAL DATA — 500 mW DO-35 GLASS Motorola TVS/Zener Device Data 6-124 500 mW DO-35 Glass Data Sheet t, TIME (SECONDS) 0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.3 0.5 0.7 1 2 3 5 7 10 20 30 D =0.5 0.2 0.1 0.05 0.01 D = 0 DUTY CYCLE, D =t1/t2 PPK t1 NOTE: BELOW 0.1 SECOND, THERMAL RESPONSE CURVE IS APPLICABLE TO ANY LEAD LENGTH (L). SINGLE PULSE ∆TJL = θJL (t)PPK REPETITIVE PULSES ∆TJL = θJL (t,D)PPK t2 0.02 10 20 30 50 100 200 300 500 1K 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 PW, PULSE WIDTH (ms) 1 2 5 10 20 50 100 200 400 1000 0.0003 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 TA = 125°C TA = 125°C NOMINAL VZ (VOLTS) Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch Figure 3. Maximum Surge Power Figure 4. Typical Reverse Leakage RECTANGULAR NONREPETITIVE WAVEFORM TJ =25°C PRIOR TO INITIAL PULSE APPLICATION NOTE Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junc- tion temperature under any set of operating conditions in order to calculate its value. The following procedure is recom- mended: Lead Temperature, TL, should be determined from: TL = θLA PD + TA θLA is the lead-to-ambient thermal resistance (°C/W) and PD is the power dissipation. The value for θLA will vary and depends on the device mounting method. θLA is generally 30–40 °C/W for the various clips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the mea- sured value of TL, the junction temperature may be deter- mined by: TJ = TL + ∆TJL ∆TJL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power pulses (L = 3/8 inch) or from Figure 10 for dc power. ∆TJL = θJL PD For worst-case design, using expected limits of IZ, limits of PD and the extremes of TJ (∆TJ) may be estimated. Changes in voltage, VZ, can then be found from: ∆V = θVZ ∆TJ θVZ,thezenervoltagetemperaturecoefficient,isfoundfrom Figures 5 and 6. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Data of Figure 2 should not be used to compute surge capa- bility. Surge limitations are given in Figure 3. They are lower than would be expected by considering only junction tempera- ture, as current crowding effects cause temperatures to be ex- tremely high in small spots resulting in device degradation should the limits of Figure 3 be exceeded. |
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