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TSOP31233 Datasheet(PDF) 2 Page - Vishay Siliconix |
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TSOP31233 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page TSOP312.., TSOP314.. www.vishay.com Vishay Semiconductors Rev. 1.5, 22-Jul-16 2 Document Number: 82492 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BLOCK DIAGRAM APPLICATION CIRCUIT Note • Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Output Active Low Fig. 2 - Pulse Length and Sensitivity in Dark Ambient 30 k Ω 2 3 1 V S OUT Demo- GND pass AGC Input PIN Band dulator Control circuit 16832 C1 IR receiver GND μC R1 + VS GND Transmitter with TSALxxxx VS VO 17170-11 OUT R 1 and C1 recommended to reduce supply ripple for VS < 2.8 V ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Supply voltage (pin 2) VS -0.3 to +6.0 V Supply current (pin 2) IS 3mA Output voltage (pin 3) VO -0.3 to (VS + 0.3) V Output current (pin 3) IO 5mA Junction temperature Tj 100 °C Storage temperature range Tstg -25 to +85 °C Operating temperature range Tamb -25 to +85 °C Power consumption Tamb ≤ 85 °C Ptot 10 mW Soldering temperature t ≤ 10 s, 1 mm from case Tsd 260 °C ELECTRICAL AND OPTICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Supply current (pin 2) Ev = 0, VS = 3.3 V ISD 0.27 0.35 0.45 mA Ev = 40 klx, sunlight ISH -0.45- mA Supply voltage VS 2.5 - 5.5 V Transmission distance Ev = 0, test signal see Fig. 1, IR diode TSAL6200, IF = 200 mA d- 45 - m Output voltage low (pin 3) IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see Fig. 1 VOSL - - 100 mV Minimum irradiance Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see Fig. 1 Ee min. - 0.12 0.25 mW/m2 Maximum irradiance tpi - 5/fo < tpo < tpi + 6/fo, test signal see Fig. 1 Ee max. 30 - - W/m2 Directivity Angle of half transmission distance ϕ1/2 -± 45 - deg 16110 E e T tpi * t * tpi 10/f0 is recommended for optimal function VO VOH VOL t Optical Test Signal (IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, t = 10 ms) Output Signal td 1) tpo 2) 1) 7/f 0 < td < 15/f0 2) t pi - 5/f0 < tpo < tpi + 6/f0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 102 103 104 105 Ee - Irradiance (mW/m 2) 20752 Input burst length λ = 950 nm, optical test signal, fig. 1 Output pulse width |
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