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SAA4998H Datasheet(PDF) 4 Page - NXP Semiconductors |
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SAA4998H Datasheet(HTML) 4 Page - NXP Semiconductors |
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2004 Feb 18 4 Philips Semiconductors Product specification Field and line rate converter with noise reduction and embedded memory SAA4998H 2.1 Patent notice Notice is herewith given that the subject integrated circuit uses one or more of the following US patents and that each of these patents may have corresponding patents in other jurisdictions. US 4740842, US 5929919, US 6034734, US 5534946, US 5532750, US 5495300, US 5903680, US 5365280, US 5148269, US 5072293, US 5771074, and US 5302909. 2.2 Latch-up test Latch-up test in accordance with “Latch-up Resistance and Maximum Ratings Test; SNW-FQ-303”; the SAA4998H fulfils the requirements. 3 QUICK REFERENCE DATA 4 ORDERING INFORMATION SYMBOL PARAMETER MIN. TYP. MAX. UNIT VDDD core supply voltage (internal rail) 1.65 1.8 1.95 V VDDA analog supply voltage VDDM field memory supply voltage VDDS SRAM supply voltage VDDE external supply voltage (output pads) 3.0 3.3 3.6 V VDDP high supply voltage of internal field memories IDD sum of supply current at 1.8 V supply voltage pins − 180 − mA at 3.3 V supply voltage pins − 6 − mA fCLK operating clock frequency − 32 33.3 MHz Tamb ambient temperature 0 − 70 °C TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION SAA4998H QFP100 plastic quad flat package; 100 leads (lead length 1.95 mm); body 14 × 20 × 2.8 mm SOT317-2 |
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