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MSK3003 Datasheet(PDF) 2 Page - M.S. Kennedy Corporation

Part No. MSK3003
Description  THREE PHASE BRIDGE MOSFET POWER MODULE
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Manufacturer  MSK [M.S. Kennedy Corporation]
Direct Link  http://www.mskennedy.com
Logo MSK - M.S. Kennedy Corporation

MSK3003 Datasheet(HTML) 2 Page - M.S. Kennedy Corporation

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Drain-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source On Resistance
Drain-Source On Resistance
Forward Transconductance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Breakdown Voltage
Gate-Source Leakage Current
N-Channel (Q2,Q4,Q6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
P-CHANNEL (Q1,Q3,Q5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BODY DIODE
71mJ
96mJ
+175°C MAX
-55°C to +150°C
-55°C to +125°C
300°C MAX
Single Pulse Avalanche Energy
(Q2,Q4,Q6)
(Q1,Q3,Q5)
Junction Temperature
Storage Temperature
Case Operating Temperature Range
Lead Temperature Range
(10 Seconds)
Drain to Source Voltage
Drain to Gate Voltage
(RGS=1MΩ)
Gate to Source Voltage
(Continuous)
Continuous Current
Pulsed Current
Thermal Resistance
(Junction to Case)
ABSOLUTE MAXIMUM RATINGS
VDSS
VDGDR
VGS
ID
IDM
RTH-JC
TJ
TST
TC
TLD
55V MAX
55V MAX
±20V MAX
10A MAX
25A MAX
7.9°C/W
VGS=0 ID=0.25mA (All Transistors)
VDS=55V VGS=0V (Q2,Q4,Q6)
VDS=-55V VGS=0V (Q1,Q3,Q5)
VGS=±20V VDS=0 (All Transistors)
VDS=VGS ID=250µA (Q2,Q4,Q6)
VDS=VGS ID=250µA (Q1,Q3,Q5)
VGS=10V ID=10A (Q2,Q4,Q6)
VGS=-10V ID=-7.2A (Q1,Q3,Q5)
VGS=10V ID=10A (Q2,Q4,Q6)
VGS=10V ID=-7.2A (Q1,Q3,Q5)
VDS=25V ID=10A (Q2,Q4,Q6)
VDS=-25V ID=-7.2A (Q1,Q3,Q5)
ID=10A
VDS=44V
VGS=10V
VDD=28V
ID=10A
RG=24Ω
RD=2.6Ω
VGS=0V
VDS=25V
f=1MHz
ID=-7.2A
VDS=-44V
VGS=-10V
VDD=-28V
ID=-7.2A
RG=24Ω
RD=3.7Ω
VGS=0V
VDS=-25V
f=1MHz
IS=10A VGS=0V (Q2,Q4,Q6)
IS=-7.2A VGS=0V (Q1,Q3,Q5)
IS=10A di/dt=100A/µS (Q2,Q4,Q6)
IS=-7.2A di/dt=100A/µS (Q1,Q3,Q5)
IS=10A di/dt=100A/µS (Q2,Q4,Q6)
IS=-7.2A di/dt=100A/µS (Q1,Q3,Q5)
Parameter
Units
MSK3003
Test Conditions
V
µA
µA
nA
V
V
S
S
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
V
V
nS
nS
µC
µC
Min.
55
-
-
-
2.0
-2.0
-
-
-
-
4.5
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4.9
34
19
27
370
140
65
-
-
-
13
55
23
37
350
170
92
1.3
-1.6
56
47
0.12
0.084
Max.
-
25
-25
±100
4.5
-4.5
0.15
0.28
0.07
0.175
-
-
20
5.3
7.6
-
-
-
-
-
-
-
19
5.1
10
-
-
-
-
-
-
-
-
-
83
71
0.18
0.13
ELECTRICAL SPECIFICATIONS
2
1
3
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
NOTES:
This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.
Resistance as seen at package pins.
Resistance for die only; use for thermal calculations.
TA=25°C unless otherwise specified.
4
Rev. G 6/00
2


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