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TLUR44K1L2 Datasheet(PDF) 1 Page - Vishay Siliconix |
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TLUR44K1L2 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page ![]() TLUR44K1L2 www.vishay.com Vishay Semiconductors Rev. 1.2, 14-Oct-14 1 Document Number: 82398 For technical questions, contact: LED@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Universal LED in Ø 3 mm Tinted Diffused Package PRODUCT GROUP AND PACKAGE DATA • Product group: LED •Package: 3 mm • Product series: standard • Angle of half intensity: ± 30° FEATURES • For DC and pulse operation • Luminous intensity categorized • Standard Ø 3 mm (T-1) package • ESD-withstand voltage: up to 2 kV according to JESD22-A114-B • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • General indicating and lighting purposes Note (1) Driving the LED in reverse direction is suitable for a short term application 19220 PARTS TABLE PART COLOR LUMINOUS INTENSITY (mcd) at IF (mA) WAVELENGTH (nm) at IF (mA) FORWARD VOLTAGE (V) at IF (mA) TECHNOLOGY MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX. TLUR44K1L2 Red 7.1 - 18 10 624 630 636 10 - 1.9 2.6 10 GaAsP on GaP ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) TLUR44K1L2 PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage(1) VR 6V DC forward current IF 20 mA Surge forward current tp ≤ 10 μs IFSM 0.5 A Power dissipation PV 60 mW Junction temperature Tj 100 °C Operating temperature range Tamb -40 to +100 °C Storage temperature range Tstg -55 to +100 °C Soldering temperature t ≤ 5 s, 2 mm from body Tsd 260 °C Thermal resistance junction/ambient RthJA 500 K/W OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TLUR44K1L2, RED PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Luminous intensity IF = 10 mA TLUR44K1L2 IV 7.1 - 18 mcd Dominant wavelength IF = 10 mA λd 624 630 636 nm Peak wavelength IF = 10 mA λp - 640 - nm Angle of half intensity IF = 10 mA ϕ -± 30 - deg Forward voltage IF = 10 mA VF -1.9 2.6 V Reverse voltage IR = 10 μA VR 615 - V Junction capacitance VR = 0 V, f = 1 MHz Cj -50- pF |
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