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ISOW7841DWER Datasheet(PDF) 6 Page - Texas Instruments |
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ISOW7841DWER Datasheet(HTML) 6 Page - Texas Instruments |
6 / 38 page 6 ISOW7840, ISOW7841, ISOW7842, ISOW7843, ISOW7844 SLLSEY2 – MARCH 2017 www.ti.com Product Folder Links: ISOW7840 ISOW7841 ISOW7842 ISOW7843 ISOW7844 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.4 Thermal Information THERMAL METRIC(1) ISOW784x UNIT DWE (SOIC) 16 PINS RθJA Junction-to-ambient thermal resistance 56.8 °C/W RθJC(top) Junction-to-case (top) thermal resistance 15.6 °C/W RθJB Junction-to-board thermal resistance 28.5 °C/W ΨJT Junction-to-top characterization parameter 2.4 °C/W ΨJB Junction-to-board characterization parameter 28.5 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance — °C/W 7.5 Power Ratings VCC = 5.5 V, IISO = 110 mA, TJ = 150°C, TA ≤ 80°C, CL = 15 pF, input a 50-MHz 50% duty-cycle square wave PARAMETER TEST CONDITIONS MIN TYP MAX UNIT PD Maximum power dissipation (both sides) 1.02 W PD1 Maximum power dissipation (side-1) 0.51 W PD2 Maximum power dissipation (side-2) 0.51 W |
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