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2 - 5

VVZB 135

IXYS reserves the right to change limits, test conditions and dimensions.

I

V

25°C

0.1

mA

V

20

mA

V

I

T

25°C

1.43

V

V

T0

for power-loss calculations only

0.85

V

r

T

T

7.1

m

Ω

V

GT

V

T

25°C

1.5

V

T

1.6

V

I

GT

V

T

25°C

78

mA

T

200

mA

V

GD

T

0.2

V

I

GD

T

5mA

I

L

V

450

mA

di

I

H

T

∞

100

mA

t

gd

V

µs

di

t

q

T

150

µs

V

dv/dt = 15 V/µs; I

-di/dt = 10 A/µs

R

thJC

per diode

0.65 K/W

R

thCH

0.2

K/W

V

BR(CES)

V

1200

V

V

GE(th)

I

4.5

6.45

V

I

CES

V

25°C

0.1

mA

V

0.5

mA

V

CEsat

V

3.5

V

t

V

10

µs

RBSOA

V

100

A

clamped inductive load; L = 100 µH;

R

Ω

C

ies

V

3.8

nF

t

d(on)

150

ns

t

d(off)

680

ns

E

on

6mJ

E

off

5mJ

R

thJC

0.33 K/W

R

thCH

0.1

K/W

Symbol

Conditions

Characteristic Values

(T

min.

typ.

max.

V

V

Inductive load; L = 100 µH;

T