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K9K1208U0C Datasheet(PDF) 9 Page - Samsung semiconductor

Part # K9K1208U0C
Description  64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
Download  39 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K9K1208U0C Datasheet(HTML) 9 Page - Samsung semiconductor

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FLASH MEMORY
9
K9K1216D0C
K9K1216U0C
K9K1208D0C
K9K1208U0C
K9K1208Q0C
K9K1216Q0C
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9K12XXX0C-GCB0,JCB0
:TA=0 to 70°C, K9K12XXX0C-GIB0,JIB0:TA=-40 to 85°C)
Parameter
Symbol
K9K12XXQ0C(1.8V)
K9K12XXD0C(2.65V)
K9K12XXU0C(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
VCC
1.70
1.8
1.95
2.4
2.65
2.9
2.7
3.3
3.6
V
Supply Voltage
VCCQ
1.70
1.8
1.95
2.4
2.65
2.9
2.7
3.3
3.6
V
Supply Voltage
VSS
0
000
00
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
1.8V DEVICE
3.3V/2.65V DEVICE
Voltage on any pin relative to VSS
VIN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
VCC
-0.2 to + 2.45
-0.6 to + 4.6
VCCQ
-0.2 to + 2.45
-0.6 to + 4.6
Temperature Under Bias
K9K12XXX0C-XCB0
TBIAS
-10 to +125
°C
K9K12XXX0C-XIB0
-40 to +125
Storage Temperature
K9K12XXX0C-XCB0
TSTG
-65 to +150
°C
K9K12XXX0C-XIB0
Short Circuit Current
Ios
5
mA


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