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K2611B Datasheet(PDF) 3 Page - Shenzhen Winsemi Microelectronics Co., Ltd

Part # K2611B
Description  Silicon N-Channel MOSFET
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Manufacturer  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Direct Link  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

K2611B Datasheet(HTML) 3 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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K2611B Product Description
WIN SEM I
M ICROELECTRON ICS
WIN SEM I
M ICROELECTRON ICS
WIN SEM I
M ICROELECTRON ICS
WIN SEM I
M ICROELECTRON ICS
WIN SEM I
M ICROELECTRON ICS
Silicon
Silicon
Silicon
Silicon N-Channel
N-Channel
N-Channel
N-Channel MOSFET
MOSFET
MOSFET
MOSFET
Fig.1 On Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance Variation vs
Drain current and Gate Voltage
Fig.4 Body Diode Forward voltage
Variation with Source Current And
Temperature
Fig.5 Capacitance Characteristics
Fig.6 Gate Charge Characteristics
VG S
T o p
1 5 V
1 0 V
9 V
8 V
7 V
6 . 5 V
6 V
5 . 5 V
5 V
B o t t o m
Notes:
1.250us pulse test
2.Tc=25 C
1 0
1
1
1 0
V
V
D S
[ ]
150 C
2 5 C
Notes:
1.250us pulse test
2.V =40V
D S
V [V]
G S
0 . 1
2
4
6
8
1 0
1
1 0
V =10V
G S
V =20V
G S
N ote:T = 25 C
j
0
2
4
5
6
1 0
1 2
1 4
1 6
1 8
2 0
0 . 8
1 . 0
1 . 2
1 . 4
I [A]
D
0 . 2
0 . 3
0 . 4
0 . 5
0 . 6
0 . 7
0 . 8
0 . 9
1 . 0
1 . 1
1 . 2
1 . 3
1 . 4
1 . 5
0 . 1
1
1 0
150 C
2 5 C
Notes:
1.250us pulse test
2.V =0V
G S
V [V]
S D
4 5 0 0
4 0 0 0
3 5 0 0
3 0 0 0
2 5 0 0
2 0 0 0
1 5 0 0
1 0 0 0
5 0 0
0
1 0- 1
1 00
1 01
V
Drain-Source Voltage[V]
D S
Cis s
Co s s
Cr s s
C iss=C gs+C gd(C ds=shorted)
C oss=C ds+C gd
C rss=C gd
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
0
2
4
6
8
1 0
1 2
Q Toltal Gate Charge[nC]
g
V =720V
D S
V =450V
D S
V =180V
D S
*Note:I =11A
D


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