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K2611B Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

Part # K2611B
Description  Silicon N-Channel MOSFET
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Manufacturer  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Direct Link  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

K2611B Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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K2611B Product Description
WIN SEM I
M ICROELECTRON ICS
WIN SEM I
M ICROELECTRON ICS
WIN SEM I
M ICROELECTRON ICS
WIN SEM I
M ICROELECTRON ICS
WIN SEM I
M ICROELECTRON ICS
Silicon
Silicon
Silicon
Silicon N-Channel
N-Channel
N-Channel
N-Channel MOSFET
MOSFET
MOSFET
MOSFET
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Gate leakage current
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
Gate-source breakdown voltage
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
Drain cut -off current
IDSS
VDS=900V,VGS=0V
-
-
1
µA
VDS=720V,Tc=125℃
10
µA
Drain -source breakdown voltage
V(BR)DSS
ID=250µA,VGS=0V
900
-
-
V
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250µA
3.0
-
5.0
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=5.5A
-
0.90
1.10
Forward Transconductance
gfs
VDS=40V,ID=5.5A
-
9.5
-
S
Input capacitance
Ciss
VDS=25V,
VGS=0V,
f=1MHz
-
2550
3340
pF
Reverse transfer capacitance
Crss
-
22
30
Output capacitance
Coss
-
210
270
Switching time
Turn-on Rise time
tr
VDD=450V,
ID=11A
RG=25Ω
(Note4,5)
-
130
280
ns
Turn-on Delay time
td(on)
-
54
122
Turn-on Fall time
tf
-
80
181
Turn-off Delay time
td(off)
-
125
304
Total gate charge(gate-source
plus gate-drain)
Qg
VDD=720V,
VGS=10V,
ID=11A
(Note4,5)
-
66
80
nC
Gate-source charge
Qgs
-
13
-
Gate-drain("miller") Charge
Qgd
-
35
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
11
A
Pulse drain reverse current
IDRP
-
-
-
44
A
Forward voltage(diode)
VDSF
IDR=11A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=11A,VGS=0V,
dIDR / dt =100 A / µs
-
999
-
ns
Reverse recovery charge
Qrr
-
16.9
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=15mH IAS=11A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤11A,di/dt≤200A/us,VDD<BVDSS,Starting TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution


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