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K2611B Datasheet(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd

Part # K2611B
Description  Silicon N-Channel MOSFET
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Manufacturer  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Direct Link  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

K2611B Datasheet(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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K2611B Product Description
WINSEM I
M ICROELECTRONICS
WINSEM I
M ICROELECTRONICS
WINSEM I
M ICROELECTRONICS
WINSEM I
M ICROELECTRONICS
WINSEM I
M ICROELECTRONICS
WT-F055-Rev.A1 Jan.2014
Silicon
Silicon
Silicon
Silicon N-Channel
N-Channel
N-Channel
N-Channel MOSFET
MOSFET
MOSFET
MOSFET
Features
11A,900V, RDS(on)(Max1.10Ω)@VGS=10V
Ultra-low Gate charge(Typical 66nC)
Fast Switching Capability
100%Avalanche Tested
Improved dv/dt capability
RoHS product
General Description
This N-Channel enhancement mode power field effect transistors are
produced using Winsemi's proprietary, planar stripe ,DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance , provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power
supplies.
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
VDSS
Drain Source Voltage
900
V
ID
Continuous Drain Current(@Tc=25℃)
11
A
Continuous Drain Current(@Tc=100℃)
6.9*
A
IDM
Drain Current Pulsed
(Note1)
44
A
VGS
Gate to Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
(Note2)
970
mJ
IAR
Avalanche Current
(Note1)
11
A
EAR
Repetitive Avalanche Energy
(Note1)
30.1
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.1
V/ ns
PD
Total Power Dissipation(@Tc=25℃)
277
W
Derating Factor above 25℃
2.22
W/℃
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55~150
TL
Channel Temperature
300
Thermal Characteristics
Symbol
Parameter
Value
Units
Min
Typ
Max
RQJC
Thermal Resistance , Junction -to -Case
-
-
0.45
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
40
℃/W
G
D
S


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