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FMMV2101 Datasheet(PDF) 1 Page - Zetex Semiconductors

Part No. FMMV2101
Description  SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES
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Manufacturer  ZETEX [Zetex Semiconductors]
Direct Link  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

FMMV2101 Datasheet(HTML) 1 Page - Zetex Semiconductors

  FMMV2101 Datasheet HTML 1Page - Zetex Semiconductors  
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SOT23
SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODES
ISSUE 3 – JANUARY 1996
7
PIN CONFIGURATION
PARTMARKING DETAILS
SEE TUNING CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Reverse Voltage
VR
30
V
Forward Current
IF
200
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Reverse Breakdown
Voltage
VBR
30
V
IR = 10µA
Reverse current
IR
20
nA
VR = 25V
Series Inductance
LS
3.0
nH
f=250MHz
Lead length≈1.5mm
Diode Capacitance
Temperature Coefficient
TCC
280
400
ppm/ °C VR = 4V, f=1MHz
Lead length≈1.5mm
Case Capacitance
CC
0.15
pF
f=1MHz
TUNING CHARACTERISTICS (at Tamb= 25°C).
Type No.
Nominal Capacitance (pF)
VR = 4V, f=1MHz
Q – Figure of MERIT
VR = 4V, f=50MHz
Turning Ratio
C2 / C30
f=1MHz
Partmark
Detail
Min.
Nom.
Max.
Min.
Max.
FMMV2101
6.1
6.8
7.5
450
2.5
3.3
6R
FMMV2103
9.0
10.0
11.0
400
2.6
3.3
6G
FMMV2104
10.8
12.0
13.2
400
2.6
3.3
6H
FMMV2105
13.5
15.0
16.5
400
2.6
3.3
6J
FMMV2107
19.8
22.0
24.2
350
2.7
3.3
6L
FMMV2108
24.3
27.0
29.7
300
2.7
3.3
6M
FMMV2109
29.3
33.0
36.3
280
2.7
3.3
6N
* SELECTED DEVICE RANGE OFFERED ONLY
3 - 185
FMMV2101
to
FMMV2109


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