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FMMT2369 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

Part No. FMMT2369
Description  SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS
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FMMT2369 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers

   
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SOT23 NPN SILICON PLANAR
HIGH SPEED SWITCHING TRANSISTORS
ISSUE 3 – AUGUST 1995
APPLICATIONS
These devices are suitable for use in high speed, low current
switching applications
PARTMARKING DETAILS
FMMT2369
- 1J
FMMT2369R
- 9R
FMMTA2369A - P5
FMMTA2369AR - 9A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCES
40
V
Collector-Emitter Voltage
VCEO
15
V
Emitter-Base Voltage
VEBO
4.5
V
Continuous Collector Current
IC
200
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
FMMT2369 FMMT2369A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO
40
40
V
IC=10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
15
15
V
IC=10mA, IB=0*
V(BR)CES
40
40
V
IC=10µA, VBE=0
Emitter-Base
Breakdown Voltage
V(BR)EBO
4.5
4.5
V
IE=10µA, IC=0
Collector Cut-Off
Current
ICBO
400
25
nA
VCB=20V, IE=0
Collector-Emitter
Saturation Voltage
VCE(sat)
0.25
0.20
V
IC=10mA, IB=1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.7
0.85
0.7
0.85
V
IC=10mA, IB=1mA*
Static Forward
Current Transfer
Ratio
hFE
40
20
20
120
40
20
120
IC=10mA, VCE=1V*
IC=10mA, VCE=1V, Tamb=-55°C*
IC=100mA, VCE=1V*
IC=100mA, VCE=2V*
Output Capacitance Cobo
44
pF
VCB=5V, IE=0, f=140KHz
Turn-on Time
ton
12
12
ns
VCC=3V, VBE(off)=1.5V IC=10mA,
IB1=3mA (See tONcircuit)
Turn-off Time
toff
18
18
ns
VCC=3V, IC=10mA, IB1=3mA
IB2=1.5mA(See tOFFcircuit)
Storage Time
ts
13
13
ns
IC=IB1= IB2=10mA
(See Storage test circuit)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FMMT2369
FMMT2369A
270
3K3
3V
C < 4pF *
S
t1
< 1ns
+10.6V
0
-1.5V
Pulse width (t1)=300ns
Duty cycle = 2%
tONCIRCUIT
270
3K3
3V
C < 4pF *
S
t1
< 1ns
+10.75V
0
-4.15V
Pulse width (t1)=300ns
Duty cycle = 2%
tOFFCIRCUIT
980
500
10V
C < 3pF *
S
t1
< 1ns
+6V
0
-4V
Pulse width (t1)=300ns
Duty cycle = 2%
* Total shunt capacitance of test jig and connectors
STORAGE TEST CIRCUIT
3-69
C
B
E
SOT23
FMMT2369
FMMT2369A


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