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FJA13009 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. FJA13009
Description  High Voltage Switch Mode Applications
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FJA13009 Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
NPN Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse test: PW
≤300µs, Duty cycle≤2% Pulse
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
700
V
V CEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current (DC)
12
A
ICP
Collector Current (Pulse)
24
A
IB
Base Current
6
A
PC
Collector Dissipation (TC=25°C)
130
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
VCEO(sus)
Collector-Emitter Sustaining Voltage
IC = 10mA, IB = 0
400
V
IEBO
Emitter Cut-off Current
VEB = 7V, IC = 0
1
mA
hFE
DC Current Gain
VCE = 5V, IC = 5A
VCE = 5V, IC = 8A
8
6
40
30
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
IC = 12A, IB = 3A
1
1.5
3
V
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
1.2
1.6
V
V
Cob
Output Capacitance
VCB = 10V , f = 0.1MHz
180
pF
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.5A
4
MHz
tON
Turn On Time
VCC =125V, IC = 8A
IB1 = - IB2 = 1.6A
RL = 15,6Ω
1.1
µs
tSTG
Storage Time
3
µs
tF
Fall Time
0.7
µs
FJA13009
High Voltage Switch Mode Applications
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
TO-3P
1
1.Base 2.Collector 3.Emitter


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