©2003 Fairchild Semiconductor Corporation

Rev. A, January 2003

TO-92

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

* Pulse Test: Pulse Width

≤ 300µs, Duty Cycle ≤ 1.0%

Symbol

Parameter

Value

Units

Drain-Gate Voltage

40

V

Gate-Source Voltage

-40

V

Forward Gate Current

50

A

Operating and Storage Junction Temperature Range

-55 ~ +150

°C

Symbol

Parameter

Test Condition

Min.

Max.

Units

Off Characteristics

Gate-Source Breakdwon Voltage

-40

V

Gate Reverse Current

-1.0

-0.2

nA

µA

Gate-Source Cutoff Voltage

-0.7

-1.6

V

Gate-Source Forward Voltage

1.0

On Characteristics

Zero-Gate Voltage Drain Current *

4.0

20

nA

Small Signal Characteristics

Forward Transfer Conductance

11,000

µmhous

Output Conductance

25

µmhous

Input Capacitace

16

pF

Reverse Transfer Capacitance

6

pF

Symbol

Parameter

Max.

Units

Total Device Dissipation

Derate above 25

°C

625

5.0

mW

mW/

°C

Thermal Resistance, Junction to Case

125

°C/W

Thermal Resistance, Junction to Ambient

357

°C/W

PF5102

N-Channel Switch

• This device is designed for low level analog switching, sample and

hold circuits and chopper stabized amplifiers.

• Sourced from process 51.

• See J111 for characteristics.

1. Drain 2. Source 3. Gate

1