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WGW40G60W Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WGW40G60W Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
2 / 7 page WGW WGW WGW WGW40 40 40 40G G G G60W 60W 60W 60W Steady, Steady, Steady, Steady, keep keep keep keep you you you you advance advance advance advance Electrical Characteristics(Tc=25℃) Characteristics Symbol Test Condition Min Typ Max Unit G-E leakage current IGES VGE=VGES,VCE=0V - - ±400 nA Collector-Emitter Breakdow nVoltage V(BR)CES IC=0.5mA,VGE=0V 600 - - V Temperature Coefficient of Breakdow nvoltage △BVCES /△TJ VGE=0V,IC=250µA - 0.6 - Collector-Emitter Saturation Voltage VCE(sat) IC=40A, VGE=15V - 2.3 2.9 IC=40A, VGE=15V Tc=125℃ - 2.5 - Collector Cut-off current ICE S V CE = V CE S ,VCE = 0 V - - 250 mA G -E threshold voltage VGE(th) VCE=VGE,IC=250µA 4.0 5.0 6.5 V Input capacitance Ciss VCE=30V VGE=0V, f=1MHz - 2110 - pF Reverse transfer capacitance C rss - 60 - Output capacitance Coss - 200 - Sw itching time Turn-on delay time Td(on) VCE=400 IC=40A RG=10Ω,VGE=15V Inductive Load,Tc=25℃ - 25 - ns Turn-onRise time tr - 42 - Turn-off delay time Td(off) - 115 - Turn-off Fall time tf - 27 54 Turn-on energy E on - 1.13 - mJ Turn-off energy E off - 0.31 - Total swiitching energy Ets - 1.44 - Sw itching time Turn-on delay time Td(on) VCE=400 IC=40A RG=10Ω,VGE=15V Inductive Load,Tc=125℃ - 24 - ns Turn-onRise time tr - 43 - Turn-off delay time Td(off) - 120 - Turn-off Fall time tf - 30 - Turn-on energy E on - 1.14 - mJ Turn-off energy E off - 0.48 - Total swiitching energy Ets - 1.62 - T otal Sw itching Loss Qg VCE=400v,I C=40A, VGE=15V - 120 - nC G ate to Emitter Charge Qge - 14 - G ate to C ollector Charge Qgc - 58 - Anti-Parallet Diode Characteristics (Ta=25℃) Characteristics Symbol Test Condition Min Type Max Unit Forward voltage(diode) VFM IF=20A Tc=25℃ - 1.9 5 2.6 V Tc=125℃ - 1.8 5 - Reverse recovery time trr IES=20A,dIES / dt =200 A / µs Tc=25℃ - 45 - ns Tc=125℃ - 140 - Reverse recovery charge Q rr Tc=25℃ - 75 - µC Tc=125℃ - 37 5 - 2/7 |
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