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MSP430F1101AIPWR Datasheet(PDF) 18 Page - Texas Instruments |
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MSP430F1101AIPWR Datasheet(HTML) 18 Page - Texas Instruments |
18 / 39 page MSP430C11x1, MSP430F11x1A MIXED SIGNAL MICROCONTROLLER SLAS241H − SEPTEMBER 1999 − REVISED SEPTEMBER 2004 18 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (continued) optional resistors, individually programmable with ROM code (see Note 1) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT R(opt1) 2.5 5 10 k Ω R(opt2) 3.8 7.7 15 k Ω R(opt3) 7.6 15 31 k Ω R(opt4) 11.5 23 46 k Ω R(opt5) Resistors, individually programmable with ROM code, all port pins, VCC = 2.2 V/3 V 23 45 90 k Ω R(opt6) Resistors, individually programmable with ROM code, all port pins, values applicable for pulldown and pullup VCC = 2.2 V/3 V 46 90 180 k Ω R(opt7) values applicable for pulldown and pullup 70 140 280 k Ω R(opt8) 115 230 460 k Ω R(opt9) 160 320 640 k Ω R(opt10) 205 420 830 k Ω NOTE 1: Optional resistors Roptx for pulldown or pullup are not available in standard flash memory device MSP430F11x1A. wake-up from lower power modes (LPMx) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT t(LPM0) VCC = 2.2 V/3 V 100 ns t(LPM2) VCC = 2.2 V/3 V 100 ns f(MCLK) = 1 MHz, VCC = 2.2 V/3 V 6 t(LPM3) Delay time (see Note 1) f(MCLK) = 2 MHz, VCC = 2.2 V/3 V 6 µs t(LPM3) Delay time (see Note 1) f(MCLK) = 3 MHz, VCC = 2.2 V/3 V 6 µs f(MCLK) = 1 MHz, VCC = 2.2 V/3 V 6 t(LPM4) f(MCLK) = 2 MHz, VCC = 2.2 V/3 V 6 µs t(LPM4) f(MCLK) = 3 MHz, VCC = 2.2 V/3 V 6 µs NOTE 1: Parameter applicable only if DCOCLK is used for MCLK. RAM PARAMETER MIN NOM MAX UNIT V(RAMh) CPU halted (see Note 1) 1.6 V NOTE 1: This parameter defines the minimum supply voltage VCC when the data in the program memory RAM remains unchanged. No program execution should happen during this supply voltage condition. |
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