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P50N06C Datasheet(PDF) 1 Page - Thinki Semiconductor Co., Ltd. |
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P50N06C Datasheet(HTML) 1 Page - Thinki Semiconductor Co., Ltd. |
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1 / 6 page  Features RDS(ON) = 0.022 ohm ID = 50A BVDSS = 60V ● ● ● ▲ ◀ ● ● ● ▲ ◀ 2. Drain 3. Source 1. Gate ® P50N06C Pb Free Plating Product P50N06C Pb 50A,60V Heatsink Planar N-Channel Power MOSFET General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technol- ogy intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220M pkg is well suited for adaptor power unit and small power inverter application. © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/6 Rev.05 TO-220M 1 2 3 • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V • Low gate charge ( typical 31 nC) • Low Crss ( typical 65 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175 °C maximum junction temperature rating Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics VDSS Drain-Source Voltage 60 V ID Drain Current - Continuous (TC = 25°C) 50 A - Continuous (TC = 100°C) 35.4 A IDM Drain Current - Pulsed (Note 1) 200 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 490 mJ IAR Avalanche Current (Note 1) 50 A EAR Repetitive Avalanche Energy (Note 1) 12 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns PD Power Dissipation (TC = 25°C) 120 W - Derate above 25°C 0.8 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 1.24 °C/W RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W Symbol Parameter P50N06C Units |
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