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L486 Datasheet(PDF) 1 Page - IXYS Corporation

Part No. L486
Description  IGBT Modules Sixpack, H Bridge
Download  4 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

L486 Datasheet(HTML) 1 Page - IXYS Corporation

  L486 Datasheet HTML 1Page - IXYS Corporation L486 Datasheet HTML 2Page - IXYS Corporation L486 Datasheet HTML 3Page - IXYS Corporation L486 Datasheet HTML 4Page - IXYS Corporation  
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© 2004 IXYS All rights reserved
1 - 4
MWI 100-12 E8
MKI 100-12 E8
IXYS reserves the right to change limits, test conditions and dimensions.
Features
• NPT3 IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant circuits
• HiPerFREDTM diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
Typical Applications
• MWI
- AC drives
- power supplies with power factor
correction
• MKI
- motor control
. DC motor amature winding
. DC motor excitation winding
. synchronous motor excitation winding
- supply of transformer primary winding
. power supplies
. welding
. X-ray
. battery charger
I
C25
= 165 A
V
CES
= 1200 V
V
CE(sat) typ. = 2.0 V
IGBT Modules
Sixpack, H Bridge
Short Circuit SOA Capability
Square RBSOA
13, 21
14, 20
1
2
3
4
7
8
9
10
11
12
5
6
17
19
15
MWI
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ = 25°C to 150°C
1200
V
V
GES
± 20
V
I
C25
T
C =
25°C
165
A
I
C80
T
C =
80°C
115
A
I
CM
V
GE = ±15 V; RG = 12 Ω; TVJ = 125°C
200
A
V
CEK
RBSOA; clamped inductive load; L = 100 µH
V
CES
t
SC
V
CE = 900 V; VGE = ±15 V; RG = 12 Ω; TVJ = 125°C
10
µs
SCSOA; non-repetitive
P
tot
T
C = 25°C
640
W
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C = 100 A; VGE = 15 V; TVJ =
25°C
2.0
2.5
V
T
VJ = 125°C
2.3
V
V
GE(th)
I
C = 4 mA; VGE = VCE
4.5
6.5
V
I
CES
V
CE = VCES;
V
GE = 0 V;
T
VJ =
25°C
1.4
mA
T
VJ = 125°C
1.4
mA
I
GES
V
CE = 0 V; VGE = ± 20 V
400
nA
t
d(on)
330
ns
t
r
15
ns
t
d(off)
750
ns
t
f
45
ns
E
on
12
mJ
E
off
10
mJ
C
ies
V
CE = 25 V; VGE = 0 V; f = 1 MHz
7.4
nF
Q
Gon
V
CE = 600 V; VGE = 15 V; IC = 150 A
0.76
µC
R
thJC
(per IGBT)
0.19 K/W
Inductive load, T
VJ = 125°C
V
CE = 600 V; IC = 100 A
V
GE = ±15 V; RG = 12
MKI
19
15
9
10
11
12
13, 21
14, 20
1
2
3
4


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