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L486 Datasheet(PDF) 2 Page - IXYS Corporation

Part No. L486
Description  IGBT Modules Sixpack, H Bridge
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

L486 Datasheet(HTML) 2 Page - IXYS Corporation

  L486 Datasheet HTML 1Page - IXYS Corporation L486 Datasheet HTML 2Page - IXYS Corporation L486 Datasheet HTML 3Page - IXYS Corporation L486 Datasheet HTML 4Page - IXYS Corporation  
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© 2004 IXYS All rights reserved
2 - 4
MWI 100-12 E8
MKI 100-12 E8
IXYS reserves the right to change limits, test conditions and dimensions.
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
GE = 15 V; TJ = 125°C)
V
0 = 0.95 V; R0 = 14 m
Free Wheeling Diode (typ. at T
J = 125°C)
V
0 = 1.3 V; R0 = 7 m
Thermal Response
IGBT (typ.)
C
th1 = 0.389 J/K; Rth1 = 0.139 K/W
C
th2 = 2.154 J/K; Rth2 = 0.051 K/W
Free Wheeling Diode (typ.)
C
th1 = 0.301 J/K; Rth1 = 0.24 K/W
C
th2 = 2.005 J/K; Rth2 = 0.062 K/W
Module
Symbol
Conditions
Maximum Ratings
T
VJ
operating
-40...+125
°C
T
JM
+150
°C
T
stg
-40...+125
°C
V
ISOL
I
ISOL ≤ 1 mA; 50/60 Hz
2500
V~
M
d
Mounting torque (M5)
2.7 - 3.3
Nm
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
pin-chip
1.8
m
d
S
Creepage distance on surface
10
mm
d
A
Strike distance in air
10
mm
R
thCH
with heatsink compound
0.01
K/W
Weight
300
g
Diodes
Symbol
Conditions
Maximum Ratings
I
F25
T
C =
25°C
200
A
I
F80
T
C =
80°C
130
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F = 100 A; VGE = 0 V; TVJ =
25°C
2.3
2.6
V
T
VJ = 125°C
1.7
V
I
RM
I
F = 120 A; diF/dt = -750 A/µs; TVJ = 125°C
58
A
t
rr
V
R = 600 V; VGE = 0 V
190
ns
R
thJC
(per diode)
0.3 K/W
pins 5, 6, 7, 8 and 17 for MWI only
Dimensions in mm (1 mm = 0.0394")


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