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KM416S1120D Datasheet(PDF) 5 Page - List of Unclassifed Manufacturers

Part No. KM416S1120D
Description  512K x 16bit x 2 Banks Synchronous DRAM LVTTL
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Maker  ETC [List of Unclassifed Manufacturers]
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KM416S1120D Datasheet(HTML) 5 Page - List of Unclassifed Manufacturers

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KM416S1120D
CMOS SDRAM
- 5 -
Rev. 1.4 (Jun. 1999)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1
W
Short circuit current
IOS
50
mA
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70
°C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
VDD, VDDQ
3.0
3.3
3.6
V
4
Input logic high votlage
VIH
2.0
3.0
VDDQ+0.3
V
1
Input logic low voltage
VIL
-0.3
0
0.8
V
2
Output logic high voltage
VOH
2.4
-
-
V
IOH = -2mA
Output logic low voltage
VOL
-
-
0.4
V
IOL = 2mA
Input leakage current
ILI
-10
-
10
uA
3
Note :
CAPACITANCE (VDD = 3.3V, TA = 23
°C, f = 1MHz, VREF =1.4V ± 200 mV)
Pin
Symbol
Min
Max
Unit
Clock
CCLK
2
4
pF
RAS, CAS, WE, CS, CKE, L(U)DQM
CIN
2
4
pF
Address
CADD
2
4
pF
DQ0 ~ DQ15
COUT
3
5
pF
1. VIH (max) = 5.6V AC. The overshoot voltage duration is
≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is
≤ 3ns.
3. Any input 0V
≤ VIN ≤ VDDQ.
Input leakage currents include HI-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. The VDD condition of KM416S1120D-C/6 is 3.135V~3.6V.
:
DECOUPLING CAPACITANCE GUIDE LINE
Recommended decoupling capacitance added to power line at board.
Parameter
Symbol
Value
Unit
Decoupling Capacitance between VDD and VSS
CDC1
0.1 + 0.01
uF
Decoupling Capacitance between VDDQ and VSSQ
CDC2
0.1 + 0.01
uF
1. VDD and VDDQ pins are separated each other.
All VDD pins are connected in chip. All VDDQ pins are connected in chip.
2. VSS and VSSQ pins are separated each other
All VSS pins are connected in chip. All VSSQ pins are connected in chip.
Note :


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