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IRFNL210B Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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IRFNL210B Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 8 page  ©2002 Fairchild Semiconductor Corporation Rev. A, December 2002 IRFNL210B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. Features • 1.0A, 200V, RDS(on) = 1.5Ω @VGS = 10 V • Low gate charge ( typical 7.2 nC) • Low Crss ( typical 6.8 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter IRFNL210B Units VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25°C) 1.0 A - Continuous (TC = 100°C) 0.93 A IDM Drain Current - Pulsed (Note 1) 10 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 40 mJ IAR Avalanche Current (Note 1) 3.3 A EAR Repetitive Avalanche Energy (Note 1) 0.031 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.0 V/ns PD Power Dissipation (TC = 25°C) 3.1 W - Derate above 25°C 0.025 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJL Thermal Resistance, Junction-to-Lead -- 40 °C/W ! " ! ! ! " " " ! " ! ! ! " " " S D G TO-92L IRFNL Series G S D |
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Similar Description - IRFNL210B |
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