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IRFBC42 Datasheet(PDF) 3 Page - Harris Corporation |
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IRFBC42 Datasheet(HTML) 3 Page - Harris Corporation |
3 / 7 page 5-3 IRFBC40, IRFBC42 Internal Drain Inductance LD Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances - 4.5 - nH Internal Source Inductance LS Measured From the Source Lead, 6mm (0.25in) From Header to Source Bonding Pad - 7.5 - nH Thermal Resistance Junction to Case RθJC - - 1.0 oC/W Thermal Resistance Junction to Ambient RθJA Typical Socket Mount - - 80 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Continuous Source to Drain Current ISD Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode - - 6.2 A Pulse Source to Drain Current (Note 3) ISDM - - 25 A Diode Source to Drain Voltage (Note 2) VSD TJ = 25 oC, I SD = 6.2A, VGS = 0V, (Figure 8) - - 1.5 V Reverse Recovery Time trr TJ = 25 oC, I SD = 6.2A, dISD/dt = 100A/µs 200 450 940 ns Reverse Recovery Charge QRR TJ = 25 oC, I SD = 6.2A, dISD/dt = 100A/µs 1.8 3.8 8.0 µC NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25 oC, L = 16mH, R G = 25Ω, peak IAS = 6.8A. (Figures 15, 16). Electrical Specifications TC = 25 oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS LS LD G D S G D S Typical Performance Curves Unless Otherwise Specified FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 0 50 100 150 0 TC, CASE TEMPERATURE ( oC) 0.2 0.4 0.6 0.8 1.0 1.2 TC, CASE TEMPERATURE ( oC) 50 75 100 25 10 8 6 0 4 2 125 IRFBC40 150 IRFBC42 |
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