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IRFBC40 Datasheet(PDF) 2 Page - Harris Corporation

Part No. IRFBC40
Description  6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs
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Maker  HARRIS [Harris Corporation]
Homepage  http://www.harris.com
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IRFBC40 Datasheet(HTML) 2 Page - Harris Corporation

   
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5-2
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRFBC40
IRFBC42
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
600
600
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
600
600
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
6.2
5.4
A
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
3.9
3.4
A
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
25
22
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
125
125
W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0
1.0
W/oC
Single Pulse Avalanche Energy Rating (Note 2) (See Figures 15,16) . . . . . . . . . . . . . . . . . EAS
570
570
mJ
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA, (Figure 11)
600
-
-
V
Gate to Source Threshold Voltage
VGS(TH) VGS = VDS, ID = 250µA
2.0
-
4.0
V
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125
oC
-
-
250
µA
On-State Drain Current (Note 4)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
IRFBC40
6.2
-
-
A
IRFBC42
5.4
-
-
A
Gate to Source Leakage
IGSS
VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON) VGS = 10V, ID = 3.4A, (Figures 9, 10)
IRFBC40
-
0.97
1.2
IRFBC42
-
1.2
1.6
Forward Transconductance (Note 4)
gfs
VDS ≥ 100V, IDS = 3.4A, (Figure 13)
4.7
70
-
S
Turn-On Delay Time
td(ON)
VDD = 300V, ID ≈ 6.2A, RG = 9.1Ω, VGS = 10V,
RL = 47Ω, (Figures 17, 18)
Switching Speeds are Essentially ndependent of
Operating Temperature
-13
20
ns
Rise Time
tr
-18
27
ns
Turn-Off Delay Time
td(OFF)
-55
83
ns
Fall Time
tf
-20
30
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT) VGS = 10V, ID = 6.2A, VDS = 0.7 x Rated BVDSS,
(Figures 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
-40
60
nC
Gate to Source Charge
Qgs
-
5.5
-
nC
Gate to Drain “Miller” Charge
Qgd
-20
-
nC
Input Capacitance
CISS
VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 12)
-
1300
-
pF
Output Capacitance
COSS
-
160
-
pF
Reverse Transfer Capacitance
CRSS
-45
-
pF
IRFBC40, IRFBC42


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