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MC9S08RD60DWE Datasheet(PDF) 45 Page - Motorola, Inc |
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MC9S08RD60DWE Datasheet(HTML) 45 Page - Motorola, Inc |
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45 / 232 page  SoC Guide — MC9S08RG60/D Rev 1.10 Freescale Semiconductor 45 MC9S08RC/RD/RE/RG 4.4.4 Burst Program Execution The burst program command is used to program sequential bytes of data in less time than would be required using the standard program command. This is possible because the high voltage to the FLASH array does not need to be disabled between program operations. Ordinarily, when a program or erase command is issued, an internal charge pump associated with the FLASH memory must be enabled to supply high voltage to the array. Upon completion of the command, the charge pump is turned off. When a burst program command is issued, the charge pump is enabled and remains enabled after completion of the burst program operation if the following two conditions are met: • The new burst program command has been queued before the current program operation completes. • The next sequential address selects a byte on the same physical row as the current byte being programmed. A row of FLASH memory consists of 64 bytes. A byte within a row is selected by addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero. The first byte of a series of sequential bytes being programmed in burst mode will take the same amount of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst program time provided that the conditions above are met. In the case where the next sequential address is the beginning of a new row, the program time for that byte will be the standard time instead of the burst time. This is because the high voltage to the array must be disabled and then enabled again. If a new burst command has not been queued before the current command completes, then the charge pump will be disabled and high voltage removed from the array. |
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