© Semiconductor Components Industries, LLC, 2015

August, 2016 − Rev. 0

Publication Order Number:

NSR2030DMX/D

NSR2030DMX

2A, 30V Schottky Half Bridge

These half bridge Schottky barrier diodes are designed for the

rectification of the high speed signal of wireless charging. The

NSR2030DMX has a very low forward voltage that will reduce

conduction loss. It is housed in a XDFN 2.0 x 1.35 x 0.4 mm package

that is ideal for space constrained wireless applications.

Features

Typical Applications

Rating

Symbol

Value

Unit

Reverse Voltage

30

V

Forward Current (DC)

2.0

A

Forward Current Surge Peak

(60 Hz, 1 cycle)

8.0

A

Non−Repetitive Peak Forward Current

t = 1

ms

t = 1 ms

t = 1 s

55

10

5.0

A

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. All specifications pertain to a single diode.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board

Derate above 25

°C

(Note 2)

0.634

5.07

W

mW/

°C

Thermal Resistance Junction to Ambient

(Note 2)

197.2

°C/W

Junction Temperature

+150

°C

Storage Temperature Range

−55 to

+150

°C

MARKING

DIAGRAM

Device

Package

Shipping†

ORDERING INFORMATION

XDFN4 2.0x1.35

CASE 711BD

www.onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

NSR2030DMXTAG

XDFN4

(Pb−Free)

3000 / Tape &

Reel

3D

= Specific Device Code

M

= Date Code

G

= Pb−Free Package

PIN CONNECTIONS

DEVICE SCHEMATIC

3D M

G