NSR2030DMX datasheet(2/4 Pages) ONSEMI

Part #	NSR2030DMX

Description	2A, 30V Schottky Half Bridge

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Manufacturer	ONSEMI [ON Semiconductor]

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NSR2030DMX

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 3)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage (IR = 1.0 mA)

V(BR)

30

−

V

Reverse Leakage (VR = 30 V)

IR

−

5.0

20

mA

Forward Voltage (IF = 0.5 A)

VF

−

0.41

0.45

V

Forward Voltage (IF = 1.0 A)

VF

−

0.46

0.55

V

Forward Voltage (IF = 2.0 A)

VF

−

0.54

0.65

V

Reverse Recovery Time

(IF = IR = 10 mA, IR(REC) = 1.0 mA)

trr

−

25

−

ns

Total Capacitance (VR = 1.0 V, f = 1.0 MHz)

CT

−

76

−

pF

3. All specifications pertain to a single diode.

Notes: 1. A 2.0 k

W variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

+10 V

2.0 k

820

W

0.1

mF

D.U.T.

VR

100

mH

0.1

mF

50

W OUTPUT

PULSE

GENERATOR

50

W INPUT

SAMPLING

OSCILLOSCOPE

tr

tp

t

10%

90%

IF

IR

trr

t

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

IF

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

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