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ZSSC3018 Datasheet(PDF) 30 Page - Integrated Device Technology |
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ZSSC3018 Datasheet(HTML) 30 Page - Integrated Device Technology |
30 / 50 page ZSSC3018 Datasheet © 2017 Integrated Device Technology, Inc 30 January 10, 2017 Figure 3.12 I2C Read Data S SlaveAddr 1 A Status A MemDat <15:8> A MemDat <7:0> N P S SlaveAddr 1 A Status A SensorDat <15:8> A SensorDat <7:0> N P A TempDat <15:8> A TempDat <7:0> Read Data (I2C Read) (a) Example: after the completion of a Memory Read command read (b) Example: after the completion of a Measure command (AAHEX) read SensorDat <23:16> A A TempDat <23:16> All mandatory I²C-bus protocol features are implemented. Optional features like clock stretching, 10-bit slave address, etc., are not supported by the ZSSC3018’s interface. In I²C High Speed Mode, a command consists of a fixed length of three bytes. 3.6 Memory In the ZSSC3018, the memory is organized in 16-bit wide registers and can be programmed multiple (at least 1000) times (MTP). There are 57 x 16-bit registers available for customer use. Each register can be re-programmed. Basically, there are two MTP content sectors: Customer Use: Accessible by means of regular write operations (40HEX to 79HEX). It contains: the customer ID, interface setup data, measurement setup information, calibration coefficients, etc. IDT Use: Only accessible for write operations by IDT. The IDT sector contains specific trim information and is programmed during manufacturing test by IDT. 3.6.1 Programming Memory Programming memory is possible with any specified supply voltage level at VDD. The MTP programming voltage itself is generated by means of an integrated charge pump, generating an internal memory programming voltage; no additional external voltage, other than VDD (as specified), needed. A single 16-bit register write will be completed within 16ms after the respective programming command has been sent. After the memory is programmed, it must be read again to verify the validity of the memory contents. |
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