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DS_K7R323682M Datasheet(PDF) 11 Page - Samsung semiconductor

Part # DS_K7R323682M
Description  1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

DS_K7R323682M Datasheet(HTML) 11 Page - Samsung semiconductor

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1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
- 11 -
Rev 2.0
Dec. 2003
K7R323682M
K7R321882M
K7R320982M
Note: For power-up, V IH
≤ VDDQ+0.3V and VDD ≤ 1.7V and VDDQ ≤ 1.4V t ≤ 200ms
VDDQ
VIL
VDDQ+0.5V
20% tKHKH(MIN)
VSS
VIH
VSS-0.5V
20% tKHKH(MIN)
Undershoot Timing
Overershoot Timing
OPERATING CONDITIONS (0
°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
Min
MAX
UNIT
Supply Voltage
VDD
1.7
1.9
V
VDDQ
1.4
1.9
V
Reference Voltage
V REF
0.68
0.95
V
Ground
VSS
0
0
V
VDDQ/2
50
SRAM
Zo=50
0.75V
VREF
ZQ
250
AC TEST OUTPUT LOAD
AC TEST CONDITIONS
Note: Parameters are tested with RQ=250
Parameter
Symbol
Value
Unit
Core Power Supply Voltage
VDD
1.7~1.9
V
Output Power Supply Voltage
VDDQ
1.4~1.9
V
Input High/Low Level
VIH/VIL
1.25/0.25
V
Input Reference Level
VREF
0.75
V
Input Rise/Fall Time
TR/T F
0.3/0.3
ns
Output Timing Reference Level
VDDQ/2
V
AC ELECTRICAL CHARACTERISTICS (VDD=1.8V
±0.1V, TA=0°C to +70°C)
Notes: 1. This condition is for AC function test only, not for AC parameter test.
2. To maintain a valid level, the transitioning edge of the input must :
a) Sustain a constant slew rate from the current AC level through the target AC level, VIL(AC) or VIH(AC)
b) Reach at least the target AC level
c) After the AC target level is reached, continue to maintain at least the target DC level, VIL(DC) or V IH(DC)
PARAMETER
SYMBOL
MIN
MAX
UNIT
NOTES
Input High Voltage
VIH (AC)
VREF + 0.2
-
V
1,2
Input Low Voltage
V IL (AC)
-
VREF - 0.2
V
1,2
VDDQ+0.25V
VSS-0.25V


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