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TPL5110QDDCTQ1 Datasheet(PDF) 5 Page - Texas Instruments |
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TPL5110QDDCTQ1 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 27 page 5 TPL5110-Q1 www.ti.com SNAS681 – FEBRUARY 2017 Product Folder Links: TPL5110-Q1 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) (3) The voltage between any two pins should not exceed 6V. (4) The maximum power dissipation is a function of TJ(MAX), θJA, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is PDMAX = (TJ(MAX) - TA)/ θJA. All numbers apply for packages soldered directly onto a PC board. 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) MIN MAX UNIT Supply voltage (VDD-GND) -0.3 6.0 V Input voltage at any pin(3) -0.3 VDD + 0.3 V Input Current on any pin -5 +5 mA Storage temperature, Tstg -65 150 °C Junction temperature, TJ(4) 150 °C (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with ANSI/ESDA/JADEC JS-001 specification. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human Body Model, per AEC Q100-002(1) ±2000 V Charged-device model (CDM), per AEC Q100-011 ±750 7.3 Recommended Operating Ratings over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT Supply Voltage (VDD-GND) 1.8 5.5 V Temperature Range –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.4 Thermal Information THERMAL METRIC(1) TPL5110-Q1 UNIT SOT-23 6 PINS RθJA Junction-to-ambient thermal resistance 163 °C/W RθJC(top) Junction-to-case (top) thermal resistance 26 °C/W RθJB Junction-to-board thermal resistance 57 °C/W ψJT Junction-to-top characterization parameter 7.5 °C/W ψJB Junction-to-board characterization parameter 57 °C/W |
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