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ZX5T849G Datasheet(PDF) 4 Page - Zetex Semiconductors

Part No. ZX5T849G
Description  30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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ZX5T849G Datasheet(HTML) 4 Page - Zetex Semiconductors

   
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ZX5T849G
SEMICO NDUC TORS
ISSUE 1 - NOVEMBER 2003
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BVCBO
80
125
V
IC=100 A
Collector-emitter breakdown voltage
BVCER
80
125
V
IC=1 A, RB 1k
Collector-emitter breakdown voltage
BVCEO
30
40
V
IC=10mA*
Emitter-base breakdown voltage
BVEBO
78.1
V
IE=100 A
Collector cut-off current
ICBO
20
0.5
nA
A
VCB=70V
V
CB=70V, Tamb=100 C
Collector cut-off current
ICER
R
1k
20
0.5
nA
A
VCB=70V
V
CB=70V, Tamb=100 C
Emitter cut-off current
IEBO
10
nA
VEB=6V
Collector-emitter saturation voltage
VCE(SAT)
25
35
50
100
185
35
50
65
125
220
mV
mV
mV
mV
mV
IC=0.5A, IB=20mA*
I
C=1A, IB=100mA*
I
C=1A, IB=20mA*
I
C=2A, IB=20mA*
I
C=6.5A, IB=300mA*
Base-emitter saturation voltage
VBE(SAT)
1025
1130
mV
IC=6.5A, IB=300mA*
Base-emitter turn-on voltage
VBE(ON)
920
1000
mV
IC=6.5A, VCE=1V*
Static forward current transfer ratio
hFE
100
100
100
20
175
200
150
30
300
IC=10mA, VCE=1V*
I
C=1A, VCE=1V*
I
C=7A, VCE=1V*
I
C=20A, VCE=1V*
Transition frequency
fT
140
MHz IC=100mA, VCE=10V
f=50MHz
Output capacitance
COBO
48
pF
VCB=10V, f=1MHz*
Switching times
tON
tOFF
37
425
ns
IC=1A, VCC=10V,
IB1=-IB2=100mA
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.


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