MMBD452LT1G datasheet(2/3 Pages) ONSEMI

Part #	MMBD452LT1G

Description	Dual Hot-Carrier Diodes

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBD452LT1G

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TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. Total Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Minority Carrier Lifetime

IF, FORWARD CURRENT (mA)

Figure 3. Reverse Leakage

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Forward Voltage

VF, FORWARD VOLTAGE (VOLTS)

0.2

0.4

0.6

0.8

1.0

1.2

100

10

0

6.0

12

18

24

10

1.0

0.1

0.01

0.001

010

20

500

0

3.0

6.0

9.0

12

15

21

1.6

30

24

27

18

1.2

0.8

0.4

f = 1.0 MHz

TA = -40°C

TA = 85°C

TA = 25°C

1.0

0.1

30

40

50

60

70

80

100

90

KRAKAUER METHOD

0

2.8

2.4

2.0

30

TA = 100°C

75

°C

25

°C

400

300

200

100

SINUSOIDAL

GENERATOR

BALLAST

NETWORK

(PADS)

SAMPLING

OSCILLOSCOPE

(50

W INPUT)

PADS

CAPACITIVE

CONDUCTION

FORWARD

CONDUCTION

STORAGE

CONDUCTION

DUT

IF(PEAK)

IR(PEAK)

Figure 5. Krakauer Method of Measuring Lifetime

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