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MMBD101LT1G Datasheet(PDF) 1 Page - ON Semiconductor

Part # MMBD101LT1G
Description  Schottky Barrier Diodes
Download  4 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMBD101LT1G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 4
1
Publication Order Number:
MBD101/D
MBD101G, MMBD101LT1G
Schottky Barrier Diodes
Designed primarily for UHF mixer applications but suitable also for
use in detector and ultra−fast switching circuits. Supplied in an
inexpensive plastic package for low−cost, high−volume consumer
requirements. Also available in Surface Mount package.
Features
Low Noise Figure − 6.0 dB Typ @ 1.0 GHz
Very Low Capacitance − Less Than 1.0 pF
High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
7.0
V
Forward Power Dissipation
TA = 25°C
MBD101
MMBD101LT1
Derate above 25
°C
MBD101
MMBD101LT1
PF
280
225
2.2
1.8
mW
mW/
°C
Junction Temperature
TJ
+150
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
7.0
10
V
Diode Capacitance
(VR = 0, f = 1.0 MHz,
Note 1, page 2)
CD
0.88
1.0
pF
Forward Voltage
(IF = 10 mA)
VF
0.5
0.6
V
Reverse Leakage
(VR = 3.0 V)
IR
0.02
0.25
mA
Product parametric performance is indicated in the Electrical Characteristics for
the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different
conditions.
SOT−23 (TO−236)
CASE 318
STYLE 8
1
2
3
Device
Package
Shipping
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MBD101G
TO−92
(Pb−Free)
5000 Units / Box
MMBD101LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
4M M
G
G
A
= Assembly Location
Y
= Year
W
= Work Week
4M
= Device Code (SOT−23)
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
MARKING
DIAGRAMS
3
CATHODE
1
ANODE
2
CATHODE
1
ANODE
(Pin 2 Not Connected)
TO−92 2−Lead
CASE 182
STYLE 1
1
2
SILICON SCHOTTKY
BARRIER DIODES
MBD
101
AYW
G
G
www.onsemi.com


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