Electronic Components Datasheet Search |
|
MMBD101LT1G Datasheet(PDF) 1 Page - ON Semiconductor |
|
MMBD101LT1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 4 1 Publication Order Number: MBD101/D MBD101G, MMBD101LT1G Schottky Barrier Diodes Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic package for low−cost, high−volume consumer requirements. Also available in Surface Mount package. Features • Low Noise Figure − 6.0 dB Typ @ 1.0 GHz • Very Low Capacitance − Less Than 1.0 pF • High Forward Conductance − 0.5 V (Typ) @ IF = 10 mA • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 7.0 V Forward Power Dissipation TA = 25°C MBD101 MMBD101LT1 Derate above 25 °C MBD101 MMBD101LT1 PF 280 225 2.2 1.8 mW mW/ °C Junction Temperature TJ +150 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 mA) V(BR)R 7.0 10 − V Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1, page 2) CD − 0.88 1.0 pF Forward Voltage (IF = 10 mA) VF − 0.5 0.6 V Reverse Leakage (VR = 3.0 V) IR − 0.02 0.25 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. SOT−23 (TO−236) CASE 318 STYLE 8 1 2 3 Device Package Shipping† ORDERING INFORMATION †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MBD101G TO−92 (Pb−Free) 5000 Units / Box MMBD101LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel *Date Code orientation and/or overbar may vary depending upon manufacturing location. 1 4M M G G A = Assembly Location Y = Year W = Work Week 4M = Device Code (SOT−23) M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) MARKING DIAGRAMS 3 CATHODE 1 ANODE 2 CATHODE 1 ANODE (Pin 2 Not Connected) TO−92 2−Lead CASE 182 STYLE 1 1 2 SILICON SCHOTTKY BARRIER DIODES MBD 101 AYW G G www.onsemi.com |
Similar Part No. - MMBD101LT1G |
|
Similar Description - MMBD101LT1G |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |