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UPC2710T Datasheet(PDF) 1 Page - NEC

Part No. UPC2710T
Description  1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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UPC2710T Datasheet(HTML) 1 Page - NEC

   
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PART NUMBER
UPC2710T
UPC2713T
PACKAGE OUTLINE
T06
T06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
ICC
Circuit Current (no signal)
mA
16
22
29
9
12
15
GS
Small Signal Gain
dB
30
33
36.5
26
29
33
fU
Upper Limit Operating Frequency
(The gain at fU is 3 dB down from the gain at 0.1 GHz)
GHz
0.7
1.0
0.9
1.2
∆GS
Gain Flatness, f = 0.1 ~ 0.6 GHz
dB
±0.8
f = 0.1
∼ 0.8 GHz
±0.8
PSAT
Saturated Output Power
dBm
11
13.5
4
7
P1dB
Output Power at 1dB Compression Point
dBm
7.5
-4
NF
Noise Figure
dB
3.5
5
3.2
4.5
RLIN
Input Return Loss
dB
3
6
10
13
RLOUT
Output Return Loss
dB
9
12
6
9
ISOL
Isolation
dB
34
39
35
40
∆GT
Gain -Temperature Coefficient
dB/
°C
-0.006
-0.016
RTH
Thermal Resistance (Junction to Ambient)
°C/W
200
200
The UPC2710T and UPC2713T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable for applications which require high
gain and wide-band operation. They are designed for low cost
gain stages in cellular radios, GPS receivers, DBS tuners,
PCN, and test/measurement equipment.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
UPC2710T
UPC2713T
DESCRIPTION
1.5 GHz SILICON MMIC
WIDE-BAND AMPLIFIER
FEATURES
• FREQUENCY RESPONSE: 1.5 GHz
• HIGH GAIN: 33 dB (UPC2710T)
• SATURATED OUTPUT POWER:
+13.5 (UPC2710T)
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
CHANGE OVER TEMPERATURE
• 5 V SINGLE SUPPLY VOLTAGE
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
GAIN vs. FREQUENCY
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25 °C, f = 0.5 GHz, VCC = 5 V)
California Eastern Laboratories


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