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LM747H Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LM747H Datasheet(HTML) 3 Page - National Semiconductor (TI) |
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3 / 8 page  Electrical Characteristics (Note 3) (Continued) Parameter Conditions LM747ALM747E LM747 LM747C Units Min Typ Max Min Typ Max Min Typ Max Supply Voltage VS e g20V to VS e g5V Rejection Ratio RS s 50X 86 96 dB RS s 10 kX 77 96 77 96 Transient Response TA e 25 C Unity Gain Rise Time 025 08 03 03 m s Overshoot 60 20 5 5 % Bandwidth (Note 4) TA e 25 C 0437 15 MHz Slew Rate TA e 25 C Unity Gain 03 07 05 05 V ms Supply CurrentAmp TA e 25 C 25 17 28 17 28 mA Power ConsumptionAmp TA e 25 C VS e g20V 80 150 mW VS e g15V 50 85 50 85 LM747A VS e g20V TA e TAMIN 165 mW TA e TAMAX 135 LM747E VS e g20V 150 TA e TAMIN 150 mW TA e TAMAX 150 LM747 VS e g15V TA e TAMIN 60 100 mW TA e TAMAX 45 75 Note 1 The maximum junction temperature of the LM747CLM747E is 100 C For operating at elevated temperatures devies in the TO-5 package must be derated based on a thermal resistance of 150 CW junction to ambient or 45 CW junction to case The thermal resistance of the dual-in-line package is 100 C W junction to ambient Note 2 For supply voltages less than g15V the absolute maximum input voltage is equal to the supply voltage Note 3 These specifications apply for g5V s VS s g20V and b55 C s TA s 125 C for the LM747A and 0 C s TA s 70 C for the LM747E unless otherwise specified The LM747 and LM747C are specified for VS e g15V and b55 C s TA s 125 C and 0 C s TA s 70 C respectively unless otherwise specified Note 4 Calculated value from 035Rise Time (ms) Schematic Diagram (Each Amplifier) TLH11479 – 1 Note Numbers in parentheses are pin numbers for amplifier B DIP only 3 |
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