DTC115TS3-0-T1-G datasheet(2/6 Pages) CYSTEKEC

Part #	DTC115TS3-0-T1-G

Description	NPN Digital Transistors (Built-in Resistors)

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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2 / 6 page

CYStech Electronics Corp.

Spec. No. : C358S3

Issued Date : 2004.03.09

Revised Date :2016.07.18

Page No. : 2/6

DTC115TS3

CYStek Product Specification

Absolute Maximum Ratings (Ta=25

°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

100

mA

Power Dissipation

Pd

200

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

-55~+150

°C

Electrical Characteristics (Ta=25

°C)

Parameter

Symbol Min. Typ. Max. Unit

Test Conditions

Collector-Base Breakdown Voltage

VCBO

50

-

V

IC=50μA

Collector-Emitter Breakdown Voltage

VCEO

50

-

V

IC=1mA

Emitter-Base Breakdown Voltage

VEBO

5

-

V

IE=50μA

Collector-Base Cutoff Current

ICBO

-

0.5

μA

VCB=50V

Emitter-Base Cutoff Current

IEBO

-

0.5

μA

VEB=4V

Collector-Emitter Saturation Voltage

VCE(sat)

-

0.3

V

IC=1mA, IB=0.1mA

DC Current Gain

hFE

100

-

600

-

VCE=5V, IC=1mA

Input Resistance

R

70

100

130

k

Ω

-

Transition Frequency

fT

-

250

-

MHz VCE=10V, IC=5mA, f=100MHz *

* Transition frequency of the devic

e

Recommended Soldering Footprint

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DTC115TS3-0-T1-G Datasheet(PDF) 2 Page - Cystech Electonics Corp.

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