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DTC115TS3-0-T1-G Datasheet(PDF) 2 Page - Cystech Electonics Corp. |
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DTC115TS3-0-T1-G Datasheet(HTML) 2 Page - Cystech Electonics Corp. |
2 / 6 page CYStech Electronics Corp. Spec. No. : C358S3 Issued Date : 2004.03.09 Revised Date :2016.07.18 Page No. : 2/6 DTC115TS3 CYStek Product Specification Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 100 mA Power Dissipation Pd 200 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Electrical Characteristics (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-Base Breakdown Voltage VCBO 50 - - V IC=50μA Collector-Emitter Breakdown Voltage VCEO 50 - - V IC=1mA Emitter-Base Breakdown Voltage VEBO 5 - - V IE=50μA Collector-Base Cutoff Current ICBO - - 0.5 μA VCB=50V Emitter-Base Cutoff Current IEBO - - 0.5 μA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) - - 0.3 V IC=1mA, IB=0.1mA DC Current Gain hFE 100 - 600 - VCE=5V, IC=1mA Input Resistance R 70 100 130 k Ω - Transition Frequency fT - 250 - MHz VCE=10V, IC=5mA, f=100MHz * * Transition frequency of the devic e Recommended Soldering Footprint |
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