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DTC114YS3 Datasheet(PDF) 2 Page - Cystech Electonics Corp. |
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DTC114YS3 Datasheet(HTML) 2 Page - Cystech Electonics Corp. |
2 / 6 page CYStech Electronics Corp. Spec. No. : C355S3 Issued Date : 2002.06.01 Revised Date : 2016.07.18 Page No. : 2/6 DTC114YS3 CYStek Product Specification Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limits Unit Supply Voltage VCC 50 V Input Voltage VI -6~+40 V IO 70 mA Output Current IO(max.) 100 mA Power Dissipation Pd 150 mW Thermal Resistance, Junction to Ambient RθJA 833 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Electrical Characteristics (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Test Conditions Vi(off) - - 0.3 V Vcc=5V, Io=100uA Input Voltage Vi(on) 3 - - V Vo=0.3V, Io=1mA Output Voltage Vo(on) - 0.1 0.3 V Io/Ii=5mA/0.25mA Input Current Ii - - 0.88 mA Vi=5V Output Current Io(off) - - 0.5 uA Vcc=50V, Vi=0V DC Current Gain Gi 68 - - - Vo=5V, Io=5mA Input Resistance R1 7 10 13 k Ω - Resistance Ratio R2/R1 3.7 4.7 5.7 - - Transition Frequency fT - 250 - MHz VCE=10V, IC=5mA, f=100MHz * * Transition frequency of the device |
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Similar Description - DTC114YS3_16 |
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