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ADRF5020BCCZN-R7 Datasheet(PDF) 5 Page - Analog Devices |
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ADRF5020BCCZN-R7 Datasheet(HTML) 5 Page - Analog Devices |
5 / 12 page Data Sheet ADRF5020 Rev. A | Page 5 of 12 ABSOLUTE MAXIMUM RATINGS For recommended operating conditions, see Table 1. Table 2. Parameter Rating Supply Voltage Positive −0.3 V to +5.5 V Negative −2.75 V to +0.3 V Digital Control Input Voltage −0.3 V to VDD + 0.3 V RF Input Power1 (f = 600 MHz to 30 GHz, TCASE) = 85°C) Through Path 27 dBm Terminated Path 25 dBm Hot Switching 21 dBm Temperature Junction (TJ) 135°C Storage −65°C to +150°C Reflow (MSL3 Rating)2 260°C Junction to Case Thermal Resistance (θJC) Through Path 420°C/W Terminated Path 160°C/W ESD Sensitivity HBM 1 kV (Class 1) 1 For power derating at frequencies less than 600 MHz, see Figure 2 to Figure 4. 2 See the Ordering Guide section. Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Only one absolute maximum rating can be applied at any one time. POWER DERATING CURVES 4 –14 –12 –10 –8 –6 –4 –2 0 2 FREQUENCY (Hz) 10k 1M 100M 10G 100k 10M 1G Figure 2. Power Derating for Through Path vs. Frequency, TCASE = 85°C 4 –14 –12 –10 –8 –6 –4 –2 0 2 FREQUENCY (Hz) 10k 1M 100M 10G 100k 10M 1G Figure 3. Power Derating for Terminated Path vs. Frequency, TCASE = 85°C 4 –14 –12 –10 –8 –6 –4 –2 0 2 FREQUENCY (Hz) 10k 1M 100M 10G 100k 10M 1G Figure 4. Power Derating for Hot Switching vs. Frequency, TCASE = 85°C ESD CAUTION |
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