NJVMJD2955T4G datasheet(2/7 Pages) ONSEMI

Part #	NJVMJD2955T4G

Description	Complementary Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJD2955 (PNP), MJD3055 (NPN)

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

6.25

°C/W

Thermal Resistance, Junction−to−Ambient (Note 2)

RqJA

71.4

°C/W

2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 30 mAdc, IB = 0)

VCEO(sus)

60

−

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

ICEO

−

50

mAdc

Collector Cutoff Current

(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)

(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

ICEX

−

0.02

2

mAdc

Collector Cutoff Current

(VCB = 70 Vdc, IE = 0)

(VCB = 70 Vdc, IE = 0, TC = 150_C)

ICBO

−

0.02

2

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

−

0.5

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 4 Adc, VCE = 4 Vdc)

(IC = 10 Adc, VCE = 4 Vdc)

hFE

20

5

100

−

Collector−Emitter Saturation Voltage (Note 3)

(IC = 4 Adc, IB = 0.4 Adc)

(IC = 10 Adc, IB = 3.3 Adc)

VCE(sat)

−

1.1

8

Vdc

Base−Emitter On Voltage (Note 3)

(IC = 4 Adc, VCE = 4 Vdc)

VBE(on)

−

1.8

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)

fT

2

−

MHz

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

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