Features

Description

The OPB817 consists of an infrared

emitting diode and an NPN silicon

phototransistor mounted in an opaque

housing with clear windows for dust

protection. The extended deep slot

allows for a longer reach of the optical

center line from the mounting plane, .90”

(22.86 mm).

Internal apertures are .010”x 0.06”for

the phototransistor “S side”and .050”x

.06”for the LED “E side”.

Custom electrical, wire or cabling is

available. Contact your local

representative or Optek for more

information.

Storage and Operating Temperature Range ................... . -40

°C to +80°C

Input Diode

Forward DC Current ............................................. . 50 mA

Peak Forward Current (1

µs pulse width, 300 pps) ....................... . 3.0 A

Reverse DC Voltage .............................................. . 2.0 V

Power Dissipation ............................................ . 100 mW

(1)

Output Phototransistor

Collector-Emitter Voltage ........................................... . 30 V

Emitter-Collector Voltage........................................... . 5.0 V

Collector DC Current ............................................. . 30 mA

Power Dissipation ............................................ . 100 mW

(1)

NOTES:

(1) Derate linearly 1.67 mW/

°C above 25°C.

(2) All parameters tested using pulse technique.

(3) Clear dust protection.

PRECAUTIONS: Exposure of the plastic body to chlorinated hydrocarbons and ketones such as

thread lock and instant adhesive products will degrade the plastic body. Cleaning agents

methanol and isopropanol are recommended. Spray or wipe do not submerge.

Product Bulletin OPB817

February 2001

Slotted Optical Switch

Type OPB817

Optek Technology, Inc.

1215 W. Crosby Road

Carrollton, Texas 75006

(972) 323-2200

Fax (972) 323-2396

29

Visit our website at www.optekinc.com

or email us at sensors@optekinc.com