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LM723J/883 Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part No. LM723J/883
Description  Voltage Regulator
Download  14 Pages
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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LM723J/883 Datasheet(HTML) 3 Page - National Semiconductor (TI)

 
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note 10)
Pulse Voltage from V
+ to V(50 ms)
50V
Continuous Voltage from V
+ to V
40V
Input-Output Voltage Differential
40V
Maximum Amplifier Input Voltage
(Either Input)
8.5V
Maximum Amplifier Input Voltage
(Differential)
5V
Current from V
Z
25 mA
Current from V
REF
15 mA
Internal Power Dissipation
Metal Can (Note 2)
800 mW
Cavity DIP (Note 2)
900 mW
Molded DIP (Note 2)
660 mW
Operating Temperature Range
LM723
−55˚C to +150˚C
LM723C
0˚C to +70˚C
Storage Temperature Range
Metal Can
−65˚C to +150˚C
Molded DIP
−55˚C to +150˚C
Lead Temperature (Soldering, 4 sec. max.)
Hermetic Package
300˚C
Plastic Package
260˚C
ESD Tolerance
1200V
(Human body model, 1.5 k
Ω in series with 100 pF)
Electrical Characteristics (Note 3) (Note 10)
Parameter
Conditions
LM723
LM723C
Units
Min
Typ
Max
Min
Typ
Max
Line Regulation
V
IN = 12V to VIN = 15V
0.01
0.1
0.01
0.1
% V
OUT
−55˚C
≤ T
A ≤ +125˚C
0.3
% V
OUT
0˚C
≤ T
A ≤ +70˚C
0.3
% V
OUT
V
IN = 12V to VIN = 40V
0.02
0.2
0.1
0.5
% V
OUT
Load Regulation
I
L = 1mAtoIL = 50 mA
0.03
0.15
0.03
0.2
% V
OUT
−55˚C
≤ T
A ≤ +125˚C
0.6
% V
OUT
0˚C
≤ T
A ≤ +70˚C
0.6
% V
OUT
Ripple Rejection
f = 50 Hz to 10 kHz, C
REF = 074
74
dB
f = 50 Hz to 10 kHz, C
REF = 5µF
86
86
dB
Average Temperature Coeffic-
−55˚C
≤ T
A ≤ +125˚C
0.002 0.015
%/˚C
ient of Output Voltage (Note 8)
0˚C
≤ T
A ≤ +70˚C
0.003 0.015
%/˚C
Short Circuit Current Limit
R
SC = 10Ω,VOUT = 065
65
mA
Reference Voltage
6.95 7.15
7.35 6.80 7.15
7.50
V
Output Noise Voltage
BW = 100 Hz to 10 kHz, C
REF = 0
86
86
µVrms
BW = 100 Hz to 10 kHz, C
REF = 5 µF
2.5
2.5
µVrms
Long Term Stability
0.05
0.05
%/1000 hrs
Standby Current Drain
I
L = 0, VIN = 30V
1.7
3.5
1.7
4.0
mA
Input Voltage Range
9.5
40
9.5
40
V
Output Voltage Range
2.0
37
2.0
37
V
Input-Output Voltage Differential
3.0
38
3.0
38
V
θ
JA
Molded DIP
105
˚C/W
θ
JA
Cavity DIP
150
˚C/W
θ
JA
H10C Board Mount in Still Air
165
165
˚C/W
θ
JA
H10C Board Mount in 400 LF/Min Air Flow
66
66
˚C/W
θ
JC
22
22
˚C/W
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2: See derating curves for maximum power rating above 25˚C.
Note 3: Unless otherwise specified, TA = 25˚C, VIN = V
+ = V
C = 12V, V
= 0, V
OUT = 5V, IL = 1 mA, RSC = 0, C1 = 100 pF, CREF = 0 and divider impedance as
seen by error amplifier
≤ 10 kΩ connected as shown in Figure 1. Line and load regulation specifications are given for the condition of constant chip temperature. Tem-
perature drifts must be taken into account separately for high dissipation conditions.
Note 4: L1 is 40 turns of No. 20 enameled copper wire wound on Ferroxcube P36/22-3B7 pot core or equivalent with 0.009 in. air gap.
Note 5: Figures in parentheses may be used if R1/R2 divider is placed on opposite input of error amp.
Note 6: Replace R1/R2 in figures with divider shown in
Figure 13.
Note 7: V+ and VCC must be connected to a +3V or greater supply.
Note 8: For metal can applications where VZ is required, an external 6.2V zener diode should be connected in series with VOUT.
www.national.com
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