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MRF5P20180 Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MRF5P20180
Description  RF POWER FIELD EFFECT TRANSISTOR
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MRF5P20180 Datasheet(HTML) 1 Page - Motorola, Inc

   
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MRF5P20180R6
MOTOROLA RF DEVICE DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
Designed for W–CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
• Typical 2–carrier W–CDMA Performance for VDD = 28 Volts,
IDQ = 2 x 800 mA, f1 = 1955 MHz, f2 = 1965 MHz,
Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over
3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products
Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz,
Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Output Power — 38 Watts Avg.
Power Gain — 14 dB
Efficiency — 26%
IM3 — –37.5 dBc
ACPR — –41 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Qualified Up to a Maximum of 32 VDD Operation
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
–0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
407
2.3
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
200
°C
CW Operation
CW
120
Watts
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 120 W CW
Case Temperature 80°C, 38 W CW
RθJC
0.43
0.43
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF5P20180/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF5P20180R6
1990 MHz, 38 W AVG.,
2 x W–CDMA, 28 V
LATERAL N–CHANNEL
RF POWER MOSFET
CASE 375D–04, STYLE 1
NI–1230
Motorola, Inc. 2003
REV 1
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com


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